Method and apparatus for change pump circuit

A method for operating a charge-pump circuit, wherein the charge-pump circuit comprises a first transistor for sinking a current from an output node and a second transistor coupled in series with the first transistor and a power node, wherein the second transistor interrupts the sinking current when the second transistor is turned off, wherein the method comprises:

• providing a continuous turn-off current to a common node between the first transistor and the second transistor for when the second transistor interrupts the sinking current;
• and
• clamping the common node below a clamping voltage, wherein clamping uses a metal-oxide-semiconductor (MOS) transistor with a source coupled to ground, a drain coupled to the common node, and a gate coupled to the common node.

A method for operating a charge-pump circuit having a first transistor for sinking a current from an output node and a second transistor coupled in series with the first transistor and a power node, wherein the second transistor interrupts the sinking current when the second transistor is turned off, wherein the method comprises:

• clamping a common node between the first transistor and the second transistor below a clamping voltage when the second transistor interrupts the sinking current, wherein clamping uses a metal-oxide-semiconductor (MOS) transistor with a source coupled to ground, a drain coupled to the common node, and a gate coupled to the common node.

A method for operating a charge-pump circuit, wherein the charge-pump circuit comprises a first transistor for driving a current from an output node and a second transistor coupled in series with the first transistor and a power node, wherein the second transistor interrupts the driving current when the second transistor is turned off, wherein the method comprises:

• providing a continuous turn-off current to a common node between the first transistor and the second transistor when the second transistor interrupts the driving current;
• and
• clamping the common node to above a clamping voltage, wherein clamping uses a metal-oxide-semiconductor (MOS) transistor with a source coupled to ground, a drain coupled to the common node, and a gate coupled to the common node.

A method for operating a charge-pump circuit having a first transistor for driving a current from an output node and a second transistor coupled in series with the first transistor and a power node, wherein the second transistor interrupts the driving current when the second transistor is turned off, wherein the method comprises:

• clamping a common node between the first transistor and the second transistor above a clamping voltage when the second transistor interrupts the driving current, wherein clamping uses a metal-oxide-semiconductor (MOS) transistor with a source coupled to ground, a drain coupled to the common node, and a gate coupled to the common node.

An apparatus for operating a charge-pump circuit, wherein the charge-pump circuit comprises a first transistor for sinking a current from an output node and a second transistor coupled in series with the first transistor and a power node, wherein the second transistor interrupts the sinking current when the second transistor is turned off, wherein the apparatus comprises:

• means for providing a continuous turn-off current to a common node between the first transistor and the second transistor when the second transistor interrupts the sinking current;
• and
• means for clamping the common node below a clamping voltage, wherein the means for clamping uses a metal-oxide-semiconductor (MOS) transistor with a source coupled to ground, a drain coupled to the common node, and a gate coupled to the common node.

An apparatus for operating a charge-pump circuit having a first transistor for sinking a current from an output node and a second transistor coupled in series with the first transistor and a power node, wherein the second transistor interrupts the sinking current when the second transistor is turned off, wherein the apparatus comprises:

• means for clamping a common node between the first transistor and the second transistor below a clamping voltage when the second transistor interrupts the sinking current, wherein the means for clamping uses a metal-oxide-semiconductor (MOS) transistor with a source coupled to ground, a drain coupled to the common node, and a gate coupled to the common node.