Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium

A semiconductor device compromising:

• a first wiring layer defining a first direction and first virtual linear lines extending in a direction that traverses the first direction;
• a plurality of dummy wiring layers provided in an identical level as the first wiring layer;
• and
• at least one restriction region;
• wherein the first direction and the first virtual linear lines define an angle of 2 to 40 degrees, and the plurality of dummy wiring layers are disposed on the first virtual linear lines;
• wherein at least two adjacent ones of the dummy wiring layers disposed on the first virtual linear line have sides that partially oppose one another;
• wherein adjacent ones of the dummy wiring layers that are disposed in the first direction are spaced a first distance from one another, the first distance being about a half of a side of each of the dummy wiring layers;
• wherein adjacent ones of the dummy wiring layers that are disposed in the first direction are offset by a second distance from one another in the second direction, the second distance being about a half of a side of each of the dummy wiring layers;
• and
• wherein the dummy wiring layers are entirely excluded from the restriction region and are spaced apart from a boundary of the restriction region.

A semiconductor device comprising:

• a first wiling layer defining a first direction and first virtual linear lines extending in a second direction that traverses the first direction;
• a plurality of dummy wiring layers provided in an identical level as the first wiring layer;
• and
• at least one restriction region;
• wherein adjacent ones of the dummy wiring layers that are disposed in the first direction are spaced a first distance from one another, the first distance being about a half of a side of each of the dummy wiring layers;
• and
• wherein adjacent ones of the dummy wiring layers that are disposed in the first direction are offset by a second distance from one another in the second direction, the second distance being about a half of a side of each of the dummy wiring layers;
• and
• wherein the dummy wiring layers are entirely excluded from the restriction region and are spaced apart from a boundary of the restriction region.

A semiconductor device comprising:

• a first wiring layer defining a first direction and a second direction perpendicular to the first direction, the first wiring layer disposed in a first level;
• a plurality of dummy wiring layers provided in the first level;
• and
• at least one restriction region;
• wherein each of the dummy wiring layers has a generally square plan shape;
• wherein adjacent ones of the dummy wiring layers that are disposed in the first direction are spaced a first distance from one another, the first distance being about a half of a side of each of the dummy wiring layers;
• wherein the adjacent ones of the dummy wiring layers that are disposed in the first direction are offset by a second distance from one another in the second direction, the second distance being about a half of a side of each of the dummy wiring layers;
• and
• wherein the dummy wiring layers are entirely excluded from the restriction region and are spaced apart from the boundary of the restriction region.