Semiconductor device
AssigneeRenesas Technology Corp.
InventorKazuhiro Tsukamoto
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Abstract
A semiconductor device includes a conductive layer formed on a silicon semiconductor substrate, cobalt silicide films formed in a surface layer of the conductive layer, an interlayer insulating film which covers the silicon semiconductor substrate thereabove, and a barrier metal film and a tungsten film which fill in a contact hole formed in the interlayer insulating film and is electrically connected to the cobalt silicide film. The positions of lower surfaces of the cobalt silicide films at the bottom of the contact hole are set lower than the position of a lower surface of the cobalt silicide film provided outside the contact hole. A cobalt silicide film having a necessary thickness can be ensured at the bottom of the contact hole. Further, a contact resistance can be reduced and a junction leak can be suppressed.
Claims10
A semiconductor device comprising:
- a first impurity diffusion layer formed in a surface layer of a semiconductor substrate;
- a first low resistance film which contains metal formed in a surface layer of said first impurity diffusion layer;
- an insulating film which covers said semiconductor substrate;
- and
- a first conductive film which fills in a first opening formed in said insulating film and is electrically connected to said first low resistance film;
- and
- a second low resistance film which contains metal formed beneath said first low resistance film and only at a bottom of said first opening,
- wherein a position of a lower surface of said second low resistance film at the bottom of said first opening is lower than a position of a lower surface of said first low resistance film provided outside said first opening.
Dependencies are inferred from the claim text.