Process of final passivation of an integrated circuit device
AssigneeSTMicroelectronics S.r.l.
InventorsGiorgio De Santi, Luca Zanotti
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Abstract
A process for forming a final passivation layer over an integrated circuit comprises a step of forming, over a surface of the integrated circuit, a protective film by means of High-Density Plasma Chemical Vapor Deposition.
Claims10
An integrated circuit device, comprising a circuit having metal lines and gaps between the metal lines as narrow as 0.2 μm and a final passivation layer having only a first dielectric film and a second dielectric film, the first dielectric film formed of one of either HDPCVD silicon nitride and HDPCVD nitride oxide, to completely fill the gaps and the second dielectric film deposited directly in contact on all the surface of the first dielectric film.
An integrated circuit device, comprising:
- an integrated circuit having metal lines and gaps between the metal lines that are as narrow as 0.2 μm;
- and
- a final passivation layer having only a first dielectric film and a second dielectric film, the first dielectric film formed over said metal lines and gaps of one of either HDPCVD silicon nitride and HDPCVD nitride oxide completely filling the gaps between the metal lines, and the second dielectric film deposited directly in contact on all the surface of the first dielectric film and formed from one of a Plasma Enhanced CVD film and an Atmospheric Pressure CVD film.
An integrated circuit device, comprising:
- an integrated circuit having metal lines and gaps between the metal lines that are as narrow as 0.2 μm;
- and
- a final passivation layer having only a first dielectric film and a second dielectric film, the first dielectric film formed over said metal lines and gaps and formed of one among HDPCVD silicon dioxide, phosphorous-doped HDPCVD silicon oxide, fluorurate-doped HDPCVD silicon oxide, HDPCVD nitride and HDPCVD nitride oxide and having a deposition/sputtering ratio of about 2.5:1 to about 8.0:1 to the integrated circuit to completely fill
- the gaps between the metal lines, and the second dielectric film deposited over all the surface of the first dielectric film and formed from one of either a Plasma Enhanced CVD film and an Atmospheric Pressure CVD film.
Dependencies are inferred from the claim text.