Semiconductor device having a buried wiring lead structure
AssigneeKabushiki Kaisha Toshiba
InventorKazutaka Akiyama
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Abstract
A semiconductor device includes a semiconductor substrate, an insulative film formed above the semiconductor substrate, the film having a first groove and a second groove greater in width than the first groove, a wiring lead buried in the first groove of the insulative film to have a substantially flat surface, and a capacitor buried in the second groove of the insulative film to have a substantially flat surface, the capacitor having a multilayer structure including a first conductive film identical in material to the lead, a capacitor dielectric film, and a second conductive film.
Claims17
A semiconductor device comprising:
- a semiconductor substrate;
- an insulative film formed above said semiconductor substrate, said film having a first groove and a second groove greater in width than the first groove;
- a wiring lead buried in the first groove of said insulative film to have a substantially flat surface;
- a capacitor buried in the second groove of said insulative film to have a substantially flat surface, said capacitor having a multilayer structure including a first conductive film identical in material to said lead, a capacitor dielectric film, and a second conductive film;
- and
- an extension lead from said first conductive film, said extension lead having an upper surface the same in level as an upper surface of said second conductive film.
A semiconductor device comprising:
- a semiconductor substrate;
- an insulative film formed above said semiconductor substrate, said film having a wiring groove with a widened contact portion formed therein;
- and
- a wiring lead with a first conductive film buried in the wiring groove, wherein
- said wiring lead has a structure with a second conductive film selectively covering an upper surface of said first conductive film at a central part of said contact portion and with said first conductive film being substantially planarly buried in said wiring groove at remaining part other than said contact portion, said second conductive film being electrically connected with said first conductive film.
A semiconductor device comprising:
- a semiconductor substrate;
- an insulative film formed above said semiconductor substrate, said film having a first groove and a second groove greater in width than the first groove;
- a wiring lead buried in the first groove of said insulative film to have a substantially flat surface;
- and
- a capacitor buried in the second groove of said insulative film to have a substantially flat surface, said capacitor having a multilayer structure including a first conductive film identical in material to said lead, a capacitor dielectric film, and a second conductive film,
- wherein said second groove is greater in depth than said first groove.
Dependencies are inferred from the claim text.