Dielectric insulation structure for integrating electronic semiconductor devices and relevant manufacturing process
AssigneeSTMicroelectronics S.r.l.
InventorsSalvatore Leonardi, Roberto Modica, Giuseppe Arena
Life of this patent
Estimating the term…
Abstract
A dielectric insulation structure is formed in a silicon layer by integrating a dielectric trench structure therein. The dielectric trench structure defines an insulation well where semiconductor devices are to be integrated therein. The dielectric trench structure is on a hollow region that is completely surrounded by a dielectric area. The dielectric area also forms the side insulation of the dielectric trench structure. The dielectric trench structure is interrupted by a plurality of points to define a plurality of side support regions for the insulation well.
Claims14
A dielectric insulation structure comprising:
- a semiconductor substrate;
- a dielectric trench structure in said semiconductor substrate for defining at least one insulation well where semiconductor devices are to be formed therein;
- said semiconductor substrate having a hollow region underlying said dielectric trench structure, the hollow region also having a dielectric layer on interior surfaces thereof;
- and
- said dielectric trench structure comprising a dielectric layer therein, said dielectric trench structure also being interrupted by a plurality of regions in said semiconductor substrate to define a plurality of side supports for said at least one insulation well, with each respective sidewall of said at least one insulation well having a side support associated therewith.
An integrated circuit comprising:
- a semiconductor substrate;
- a dielectric trench structure in said semiconductor substrate for defining at least one insulation well;
- said semiconductor substrate having a hollow region underlying said dielectric trench structure, the hollow region also having a dielectric layer on interior surfaces thereof;
- said dielectric trench structure comprising a dielectric layer therein, said dielectric trench structure also being interrupted by a plurality of regions in said semiconductor substrate to define a plurality of side supports for said at least one insulation well, with each respective sidewall of said at least one insulation well having a side support associated therewith and
- at least one semiconductor device formed in said at least one insulation well.
Dependencies are inferred from the claim text.