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US 6,888,179 B2Granted
GaAs substrate with Sb buffering for high in devices
AssigneeBAE Systems Information and Electronic Systems Integration Inc.
InventorParvez N. Uppal
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Abstract
GaAs substrates with compositionally graded buffer layers for matching lattice constants with high-Indium semiconductor materials such as quantum well infrared photoconductor devices and thermo photo voltaic devices are disclosed.
Claims20
A quantum well infrared photoconductor device comprising:
- a GaAs substrate;
- a buffer disposed on the GaAs substrate, the buffer including graded layers of Al0.5Ga0.5AsxSb1-x, where x gradually increases front 0 to 0.5 to effect a lattice transition from the GaAs substrate to a first n+ InyGa1-yAs contact layer disposed on the buffer;
- a number of quantum well layers stacked on the first n+ InyGa1-yAs contact layer, each quantum well layer including an InyAl1-yAs layer and an InyGa1-yAs layer;
- and
- a second n+ InyGa1-yAs contact layer disposed on the stacked quantum well layers.
2 more elements
A quantum well infrared photoconductor device comprising:
- a GaAs substrate that is transparent to infrared light;
- a buffer disposed on the GaAs substrate, the buffer including graded layers of Al0.5Ga0.5AsxSb1-x, where x gradually increases from 0 to 0.5 to effect a lattice transition from the GaAs substrate to an Indium-based quantum well structure.
A quantum well infrared photoconductor device comprising:
- a GaAs substrate;
- a buffer disposed on the GaAs substrate, the buffer including graded layers of Al0.5Ga0.5AsxSb1-x, where x gradually increases from 0 to 0.5 to effect a lattice transition from the GaAs substrate to a first n+ InyGa1-yAs contact layer disposed on the buffer;
- 20 to 40 alternating quantum well layers stacked on the first n+ InyGa1-yAs contact layer, each quantum well layer including an In0.5Al0.5As layer and an In0.5Ga0.5As layer;
- and
- a second n+ InyGa1-yAs contact layer disposed on the stacked quantum well layers.
2 more elements
A quantum well infrared photoconductor device comprising:
- a GaAs substrate that is transparent to infrared;
- a buffer disposed on the GaAs substrate, the buffer including graded layers of Al0.5Ga0.5AsxSb1-x, where x gradually increases from 0 to 0.5 to effect a lattice transition from the GaAs substrate to a first n+ InyGa1-yAs contact layer disposed on the buffer;
- 20 to 40 alternating quantum well layers stacked on the first n+ InyGa1-yAs contact layer, each quantum well layer including an InyAl1-yAs layer and an InyGa1-yAs layer
- a second n+ InyGa1-yAs contact layer disposed on the stacked quantum well layers.
1 more element
Dependencies are inferred from the claim text.