Compound semiconductor structure with lattice and polarity matched heteroepitaxial layers

A semiconductor structure comprising:

• a substrate having an outer surface layer of a group IV element;
• a first layer of a group III element provided on said outer surface layer;
• a second layer of a group VI element provided on said first layer;
• a third layer of a group III element provided on said second layer;
• and
• a fourth layer of a group IV element provided on said third layer.

A semiconductor structure comprising:

• a substrate having an outer surface layer of a group IV element;
• a first layer of one of a group II or a group VI element provided on said outer surface layer;
• a second layer of the other of a group II or a group VI element provided on said first layer;
• and
• a third layer of a group IV element provided on said second layer.

A semiconductor structure comprising:

• a substrate having an outer surface layer of a group IV element;
• a first layer of an element, selected such that the absolute value of the difference between the valence of the group IV element of the outer surface layer and the valence of the element of said first layer is one, provided on said outer surface-layer;
• a second layer of an element, selected such that the absolute value of the difference between the valence of the element of said second layer minus the valence of the element of said first layer is three, provided on said first layer;
• a third layer of an element, selected such that the absolute value of the difference between the valence of the element in said third layer and the valence of the element in the second layer is three, provided on said second layer;
• and
• a fourth layer of a group IV element provided on said third layer.