Light emitting diode
AssigneeDallan Luming Science & Technology Group Co., Ltd.
InventorsHeng Liu, Changhua Chen
Life of this patent
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Abstract
A semi-conductor light emitting diode includes closely spaced n and p electrodes formed on the same side of a substrate to form an LED with a small foot-print. A semi-transparent U shaped p contact layer is formed along three sides of the top surface of the underlying window layer. The p electrode is formed on the p contact layer centered on the closed end of the U shaped layer. An n contact layer is formed on an n cladding layer and centered in the open end of the U of the p contact layer. The n electrode is formed on the n contact layer. The n and p electrodes are electrically isolated from one another by either a trench or an insulator, situated between the electrodes.
Claims15
A semi-conductor light emitting diode structure comprising:
- a sapphire substrate;
- a GaN based light emitting structure;
- first and second electrodes laterally spaced apart on a same side of said substrate;
- and
- means formed in said diode structure for isolating said electrodes from one another;
- wherein said first electrode comprises a U shaped semi transparent conductive p contact layer;
- and a metal p contact centered on a closed end of the U shaped layer;
- and
- wherein said second electrode comprises an n contact layer and a metal n contact centered in an open end of the U shaped layer.
A semi-conductor light emitting diode structure comprising:
- a substrate;
- first and second electrodes laterally spaced apart on a same side of said substrate;
- and
- means formed in said diode structure for isolating said electrodes from one another;
- wherein said first electrode comprises a U shaped semi transparent conductive p contact layer;
- and a metal p contact centered on a closed end of the U shaped layer;
- and
- wherein said second electrode comprises an n contact layer and a metal n contact centered in an open end of the U shaped layer.
A semiconductor light emitting diode structure comprising:
- a substrate;
- a first electrode formed on said substrate in a U shape;
- a second electrode formed on said substrate and spaced apart from said first electrode by an isolation trench, said second electrode being disposed in an open end of said U shape.
A semiconductor light emitting diode structure comprising:
- a substrate;
- first and second electrodes laterally spaced apart on a same side of said substrate;
- and
- an isolation mechanism formed in said diode structure which isolates said electrodes from one another;
- wherein said first electrode comprises:
- a U-shaped semi-transparent conductive p contact layer;
- and
- a metal p contact centered on a closed end of the U-shaped layer;
- and
- wherein said second electrode comprises:
- an n contact layer and a metal n contact centered in an open end of the U-shaped layer.
A semiconductor light emitting diode structure comprising:
- a substrate;
- a buffer region disposed on said substrate;
- an n cladding layer disposed on said buffer region;
- an active region disposed on said n cladding layer;
- a p cladding layer disposed on said active region;
- a p window region disposed on said p cladding region;
- a p contact region disposed on said p window region;
- a p contact layer and a p metal contact disposed on said p contact region, which forms an ohmic contact with the p window region;
- an n contact region disposed on said n cladding layer;
- and
- an n metal contact disposed on said n contact region, which forms an ohmic contact with the n cladding layer;
- wherein said n contact region and said n metal contact are isolated from said active region, said p cladding layer, said p window region, said p contact layer, and said p metal contact.
Dependencies are inferred from the claim text.