Semiconductor light emitting device and its manufacture
AssigneeStanley Electric Co., Ltd.
InventorsSatoshi Kon, Kazuki Takeshima, Junichi Sonoda
Life of this patent
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Abstract
A ball-up preventive layer is formed on a first substrate. A bonding layer made of eutectic material is formed on the ball-up preventive layer. A semiconductor light emitting structure is formed on a second substrate. A first electrode is formed at least partially on the semiconductor light emitting structure. A barrier layer is formed on the first electrode. A metal layer is formed on the barrier layer. The bonding layer and the metal layer are bonded together. The second substrate is removed from the bonded structure. A second electrode is formed on a partial surface area of the semiconductor light emitting structure exposed on a surface of the bonded structure to obtain a semiconductor light emitting device.
Claims10
A semiconductor light emitting device comprising:
- a substrate;
- a ball-up preventive layer formed on said substrate;
- a bonding layer made of eutectic material and formed on said ball-up preventive layer;
- a metal layer formed on said bonding layer;
- a barrier layer formed on said metal layer;
- a first electrode formed on or in parallel with said barrier layer;
- a semiconductor light emitting structure formed on a surface including an upper surface of said first electrode;
- and
- a second electrode formed on a partial surface of said semiconductor light emitting structure,
- wherein:
- eutectic material of said bonding layer forms eutectic with said metal layer to bond together said bonding layer and said metal layer;
- said ball-up preventive layer prevents ball-up of said bonding layer;
- and
- said barrier layer prevents a composition of a material of said first electrode from diffusing into said barrier layer and prevents the eutectic material of said bonding layer from intruding into said first electrode.
Dependencies are inferred from the claim text.