Light-emitting diode
AssigneeFuji Photo Film Co., Ltd.
InventorToshiro Hayakawa
Life of this patent
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Abstract
An n-GaN low-temperature buffer layer, an n-GaN buffer layer, an n-In0.05Ga0.95N buffer layer, an n-Al0.15Ga0.85N clad layer, an n-GaN optical guide layer, an undoped active layer, a p-GaN optical guide layer, a p-Al0.15Ga0.85N clad layer, and a p-GaN cap layer, are grown on a sapphire substrate. Then, an epitaxial layer other than a light-emitting region is etched until the n-GaN buffer layer is exposed. Next, in a similar process, etching is performed up to anywhere within the p-Al0.15Ga0.85N clad layer so that a 4-μm-wide stripe region in the form of a ridge remains. The length from the light-emitting facet to the opposite facet is between 30 and 250 μm.
Claims19
A light-emitting diode with a stripe waveguide structure, comprising:
- an active layer comprising at least one of InGaN, GaN, and AlGaN;
- wherein a length from a light-emitting facet to a facet opposite to said light-emitting facet is between 30 and 250 μm.
A light-emitting diode comprising:
- a stripe waveguide having an active layer, said active layer comprising at least one of InGaN, GaN, and AlGaN;
- wherein a length of the stripe waveguide from a light-emitting facet to a facet opposite to said light-emitting facet is between 30 and 250 μm, and
- wherein said length from the light-emitting facet to the facet opposite to said light emitting facet is not a resonance length for the light emitted by said light-emitting diode.
A light-emitting diode comprising:
- a stripe waveguide having an active layer, said active layer comprising at least one of InGaN, GaN, and AlGaN;
- wherein a length of the stripe waveguide from a light-emitting facet to a facet opposite to said light-emitting facet is between 30 and 250 μm, and
- wherein the light-emitting diode does not employ a resonator.
Dependencies are inferred from the claim text.