Electronic apparatus having polycrystalline semiconductor thin film structure
AssigneeHitachi, Ltd.
InventorsShinya Yamaguchi, Masanobu Miyao, Kiyokazu Nakagawa, Nobuyuki Sugii
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Abstract
An electronic apparatus employs a polycrystalline semiconductor thin film structure formed of an insulating substrate and a plurality of polycrystalline layers laminated on the insulating substrate. A plurality of transistors are formed at the surface of the polycrystalline semiconductor thin film structure, each transistor being formed in a region of one of a plurality of crystal grains disseminated on the surface of the polycrystalline layers. A number of crystal grains in each of the polycrystalline layers is gradually reduced from a lower layer to an upper layer.
Claims12
A liquid crystal display device, comprising:
- a semiconductor device having a plurality of transistors formed at a surface of a polycrystalline semiconductor thin film structure formed of an insulating substrate and n polycrystalline layers (n≧2) laminated on said insulating substrate, with crystal grains disseminated on the surface thereof, the number of the crystal grains in each of the polycrystalline layers being gradually reduced from a lower layer to an upper layer, each of said transistors being formed in a region of one of said crystal grains, and said semiconductor device being attached to a liquid crystal display panel.
An information processing device, comprising:
- a semiconductor device having a plurality of transistors formed at a surface of a polycrystalline semiconductor thin film structure formed of an insulating substrate and n polycrystalline layers (n≧2) laminated on said insulating substrate, with crystal grains disseminated on the surface thereof, the number of the crystal grains in each of the polycrystalline layers being gradually reduced from a lower layer to an upper layer, each of said transistors being formed in a region of one of said crystal grains;
- and
- a central processing unit, memory circuit, and peripheral circuitry configured by said semiconductor device.
Dependencies are inferred from the claim text.