Structure of TFT planar display panel
AssigneeToppoly Optoelectronics Corp.
InventorAn Shih
Life of this patent
Estimating the term…
Abstract
A structure of a thin film transistor (TFT) planar display panel is disclosed. The structure includes a light-transmissible substrate, a buffer layer formed on the light-transmissible substrate, a top-gate TFT structure formed on the buffer layer and including a channel region, and a light-shielding structure formed between a back light source and the top-gate TFT structure, and substantially aligned with the channel region for protecting the channel region from illumination of the back light source. The process for manufacturing a TFT planar display panel is also disclosed.
Claims16
A structure of a thin film transistor (TFT) planar display panel comprising:
- a light-transmissible substrate;
- a buffer layer formed on said light-transmissible substrate;
- a top-gate TFT structure formed on said buffer layer and including a channel region;
- and
- a light-shielding structure formed between a back light source of said thin film transistor planar display panel and said top-gate TFT structure and electrically isolated from said top-gate TFT structure, and an area of said light-shielding structure being substantially aligned with and generally coextensive with said channel region for protecting said channel region from illumination of said back light source.
A structure of a thin film transistor (TFT) planar display panel comprising:
- a light-transmissible substrate;
- a buffer layer formed on said light-transmissible substrate;
- a top-gate TFT structure formed on said buffer layer and including a channel region;
- and
- a light-shielding structure formed between a back light source of said thin film transistor planar display panel and said top-gate TFT structure and electrically isolated from said top-gate TFT structure, and serving as a mask while defining said channel region of said top-gate TFT structure so that an area of said light-shielding structure is substantially aligned with and generally coextensive with said channel region for protecting said channel region from illumination of said back light source.
A structure of a thin film transistor (TFT) planar display panel comprising:
- a light-transmissible substrate;
- a light-shielding structure formed on said light transmissible substrate;
- a buffer layer formed over said light-transmissible substrate;
- a top-gate TFT structure formed on said buffer layer and electrically isolated from said light-shielding structure, said top-gate TFT structure having a channel region defined by a patterned photoresist, wherein said photoresist is patterned in an exposing step using said light-shielding structure as a mask so that an area of said light-shielding structure is substantially aligned with and generally coextensive with said channel region for protecting said channel region from illumination of a back light source of said thin film transistor planar display panel.
Dependencies are inferred from the claim text.