Method for defect and conductivity engineering of a conducting nanoscaled structure
AssigneeSony International (Europe) GmbH
InventorsOliver Harnack, Jurina Wessels, William E. Ford, Akio Yasuda
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Abstract
The invention relates to a method for defect and conductivity engineering of an individual part in a conducting nanoscaled structure by generating heat-induced migration, melting, sputtering and/or evaporation of conductive material of the nanoscaled structure by directing a focussed electron beam on this individual part of the structure to be engineered. The invention further relates to the use of a secondary electron microscope having a filter for detecting back scattered electrons for such a method and a respective secondary electron microscope having such a filter for detecting back scattered electrons.
Claims21
A method for repairing defect edges of a gap region of a nanoscaled structure to provide conductivity therethrough, said method comprising the steps of:
- generating heat-induced migration, melting, sputtering and/or evaporation of conductive material of the nanoscaled structure, said generating step comprising the step of directing a focused electron beam on said gap region covering said defect edges of the nanoscaled structure being engineered so as to lead to film of the gap region and connection of said defect edges thereby providing a conductive nanoscaled structure.
A method for defect and conductivity engineering of an individual portion in a conducting nanoscaled structure comprising the steps of:
- generating heat-induced migration, melting, sputtering and/or evaporation of conductive material of the nanoscaled structure, said generating step comprising the step of directing a focused electron beam on said individual portion of the nanoscaled structure being engineered;
- inspecting said conductivity nanoscaled structure by directing an electron beam onto a portion of the conducting nanoscaled structure to be inspected and detecting backscattered electrons with a beam of primary electrons being accelerated to high potential by an electric field and retarded by a retarding field before reaching the conducting nanoscaled structure wherein the retarding field retards the primary electron of the electron beam to an energy of 2% to 10% of its maximum energy generated by said electron field.
Dependencies are inferred from the claim text.