Thermally matched support ring for substrate processing chamber

A substrate support ring comprising:

• (a) a band comprising an inner perimeter to at least partially surround a periphery of the substrate, the band comprising a radiation absorption surface;
• and
• (b) a lip extending radially inwardly from the inner perimeter of the band,
• wherein the band and lip comprise a combined thermal mass Tm, and
• wherein the radiation absorption surface comprises an absorptivity A and a surface area Sa, such that the ratio (A×Sa)/Tm is from about 4×10−5 m2K/J to about 9×10−4 m2K/J.

A substrate support ring comprising:

• (a) a band comprising an inner perimeter to at least partially surround a periphery of the substrate, the band comprising a radiation absorption surface, wherein the radiation absorption surface comprises (i) an absorptivity of from about 0.1 to about 1.0, and (ii) a surface area of from about 2×10−3 m2 to about 3×10−2 m2;
• and
• (b) a lip extending radially inwardly from the inner perimeter of the band to support the substrate,
• wherein the band and lip comprise silicon carbide, and
• wherein the radiation absorption surface comprises a layer of oxidized silicon carbide.

A substrate support ring comprising:

• (a) a band comprising an inner perimeter to at least partially surround a periphery of the substrate, the band comprising a radiation absorption surface;
• and
• (b) a lip extending radially inwardly from the inner perimeter of the band to support the substrate,
• wherein the band and lip comprise silicon carbide, and wherein the radiation absorption surface comprises a layer of oxidized silicon carbide, and
• wherein the band and lip furthermore comprise (i) a heat capacity of from about 900 J/Kg/K to about 1300 J/Kg/K, and (iii) a combined thermal mass of from about 2 J/K to about 750 J/K.