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US 6,887,800 B1Granted
Method for making a semiconductor device with a high-k gate dielectric and metal layers that meet at a P/N junction
AssigneeIntel Corporation
InventorsMatthew V. Metz, Suman Datta, Jack Kavalieros, Mark L. Doczy, Justin K. Brask, Uday Shah, Robert S. Chau
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Abstract
A method for making a semiconductor device is described. That method comprises modifying a first surface, and forming a high-k gate dielectric layer on an unmodified second surface.
Claims6
A method for making a semiconductor device comprising:
- forming a dielectric layer on a substrate;
- forming a trench within the dielectric layer, the trench having a sidewall;
- exposing at least part of the sidewall to fluorine to inhibit formation of a high-k dielectric layer on the surface of the sidewall;
- and
- forming a high-k gate dielectric layer within the trench without forming a meaningful amount of a high-k dielectric layer on the surface of the sidewall.
2 more elements
A method for making a semiconductor device comprising:
- forming a dielectric layer on a substrate;
- forming a first trench within the dielectric layer, the first trench having a first sidewall;
- modifying at least part of the first sidewall;
- forming a first high-k gate dielectric layer within the first trench;
- forming a first metal layer on the first high-k gate dielectric layer;
- forming a second trench within the dielectric layer, the second trench having a second sidewall;
- modifying at least part of the second sidewall;
- forming a second high-k gate dielectric layer within the second trench;
- and
- forming a second metal layer on the second high-k ate dielectric layer;
- wherein the first metal layer and the second metal layer meet at a P/N junction.
8 more elements
Dependencies are inferred from the claim text.