Indium oxide conductive film

A method for forming a one-transistor (1T) memory device using an indium oxide (In2O3) film as a gate insulator replacement material, the method comprising:

• forming a CMOS transistor including source, drain, and channel regions in a substrate;
• depositing an In film, using a physical vapor deposition (PVD) process;
• forming a film including In overlying the transistor channel region;
• simultaneously heating the substrate;
• following the formation of the In-including film, post-annealing in an O2 atmosphere;
• in response to the post-annealing, forming an In2O3 film gate insulator having a resistivity in the range of 260 to 800 ohm-cm;
• forming a gate overlying the In2O3 gate insulator;
• forming a ferroelectric film overlying the In2O3 selected from the group including PGO, PZT, STO, SBT, SBTN, PLT, PLZT, and BTO;
• and,
• forming a top electrode overlying the ferroelectric film.

A method for forming a one-transistor (1T) memory device using an indium oxide (In2O3) film as an insulator, the method comprising:

• forming a CMOS transistor gate region in a substrate;
• depositing an In film, using a physical vapor deposition (PVD) processing;
• forming a film including In overlying the gate region;
• simultaneously heating the substrate material;
• following the formation of the In-including film, post-annealing in an O2 atmosphere;
• in response to the post-annealing, forming an In2O3 film overlying the gate having a resistivity in the range of 260 to 800 ohm-cm;
• forming a ferroelectric film overlying the In2O3 selected from the group including PGO, PZT, STO, SBT, SBTN, PLT, PLZT, and BTO;
• and,
• forming a top electrode overlying the ferroelectric film.