Method of wet etching a silicon and nitrogen containing material
AssigneeKoninklijke Philips Electronics N.V.
InventorsDirk Maarten Knotter, Johannes Van Wingerden, Madelon Gertruda Josephina Rovers
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Abstract
The invention relates to a method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous solution being applied under elevated pressure to reach a temperature above 100° C.
Claims10
A method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous solution being applied under elevated pressure to reach a temperature above 100° C.
Dependencies are inferred from the claim text.