Pre-cleaning method of substrate for semiconductor device
AssigneeJusung Engineering Co., Ltd.
InventorKyu-Jin Choi
Life of this patent
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Abstract
A pre-cleaning method of a substrate for a semiconductor device includes preparing a chamber, the chamber including a plasma electrode at an outside of the chamber, a power supplying system connected to the plasma electrode, a susceptor in the chamber, and an injector injecting gases into the chamber, equipping a metallic net in the chamber, the metallic net over the susceptor and grounded, disposing a substrate on the susceptor, and injecting a hydrogen gas into the chamber through the injector and supplying radio frequency power to the plasma electrode, thereby removing an oxide layer on the substrate.
Claims2
A pre-cleaning method of a substrate for a semiconductor device, comprising:
- preparing a chamber, including:
- a plasma electrode at an outside of the chamber;
- a power supplying system connected to the plasma electrode;
- a susceptor in the chamber;
- and
- an injector injecting gases into the chamber;
- equipping a metallic net in the chamber, with the metallic net having a circular shape and a mesh of the metallic net having a size within a range of about 0.1 mm to about 2 mm, the metallic net over the susceptor and grounded
- disposing a substrate on the susceptor;
- injecting a hydrogen gas into the chamber through the injector and supplying radio frequency power to the plasma electrode, thereby generating hydrogen ions and hydrogen radicals;
- and
- drawing the hydrogen ions to the metallic net and impacting the substrate with hydrogen radicals, thereby removing an oxide layer on the substrate.
Dependencies are inferred from the claim text.