Back to results
US 6,887,780 B2Granted
Concentration graded carbon doped oxide
AssigneeIntel Corporation
InventorsEbrahim Andideh, Mark Bohr
Life of this patent
Estimating the term…
Abstract
A process for forming an interlayer dielectric layer is disclosed. The method comprises first forming a carbon-doped oxide (CDO) layer with a first concentration of carbon dopants therein. Next, the CDO layer is further formed with a second concentration of carbon dopants therein, wherein the first concentration is different than the second concentration.
Claims5
A process comprising:
- forming a metal structure having at least one via and at least one interconnect onto a substrate, said metal structure extending above a surface of said substrate;
- forming, subsequent to said forming said metal structure, a carbon-doped oxide (CDO) layer with a first concentration of carbon dopants therein on said substrate and filling entirely between elements of said metal structure;
- and
- continuing to form, subsequent to said forming said CDO layer with said first concentration of carbon dopants, said CDO layer further above said metal interconnect structure with a second concentration of carbon dopants therein, wherein said first concentration of carbon dopants is higher than said second concentration of carbon dopants to form a hard mask with the second concentration of carbon dopants.
1 more element
A process comprising:
- forming a first layer of carbon-doped oxide (CDO) on a substrate, said first layer of CDO having a first concentration of carbon dopants therein;
- forming a second layer of CDO having a second concentration of carbon dopants therein above said first layer of CDO;
- and
- forming a third layer of CDO having a third concentration of carbon dopants therein above said second layer of CDO, wherein said first concentration and said third concentration are higher than said second concentration to reduce electric field fringe effects.
1 more element
A process comprising:
- forming a first layer of carbon-doped oxide (CDO) on a substrate, said first layer of CDO having a first concentration of carbon dopants therein;
- forming a second layer of CDO having a second concentration of carbon dopants therein above said first layer of CDO;
- and
- forming a third layer of CDO having a third concentration of carbon dopants therein above said second layer of CDO, wherein said first concentration and said third concentration are lower than said second concentration to reduce electric field fringe effects.
1 more element
Dependencies are inferred from the claim text.