Method for fabricating semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTetsuzo Ueda, Masahiro Ishida, Masaaki Yuri
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Abstract
A polymer film including an adhesive layer, which can be peeled off with heat, is bonded to the upper surface of a semiconductor layer. Then, a KrF excimer laser light beam is applied to a surface of a substrate opposite to the semiconductor layer. This causes local heating at the laser spot, so that the bonding of atoms is cut off at the interface between the semiconductor layer and the substrate, thereby forming a thermal decomposition layer between the substrate and the semiconductor layer. Subsequently, the substrate is heated at a given temperature, so that the adhesive layer foams to lose its adhesive power. As a result, the polymer film is easily peeled off from the semiconductor layer.
Claims46
A method for fabricating a semiconductor device, the method comprising the steps of:
- a) growing a first semiconductor layer on a first substrate;
- b) bonding an adhesive surface of a polymer film including an adhesive layer, which can be peeled off with heat, to an upper surface of the first semiconductor layer;
- c) applying irradiating light having a wavelength at which the light passes through the first substrate and is absorbed in the first semiconductor layer, to a surface of the first substrate opposite to the first semiconductor layer, thereby forming a thermal decomposition layer between the first semiconductor layer and the first substrate as a result of thermal decomposition of the first semiconductor layer;
- and
- d) heating the first substrate to lower the adhesive power of the adhesive layer, thereby peeling off the polymer film from the first semiconductor layer.
A method for fabricating a semiconductor device, the method comprising the steps of:
- a) growing a first semiconductor layer on a first substrate;
- b) forming a sacrificial film on the first semiconductor layer, and then bonding an adhesive surface of a polymer film including an adhesive layer, to an upper surface of the sacrificial film;
- c) applying irradiating light having a wavelength at which the light passes through the first substrate and is absorbed in the first semiconductor layer, to a surface of the first substrate opposite to the first semiconductor layer, thereby forming a thermal decomposition layer between the first semiconductor layer and the first substrate as a result of thermal decomposition of the first semiconductor layer;
- and
- d) selectively removing the sacrificial film, thereby peeling off the polymer film from the first semiconductor layer.
Dependencies are inferred from the claim text.