Method for producing a gate structure for an MOS transistor
AssigneeInfineon Technologies AG
InventorsChristian Herzum, Karlheinz Mueller
Life of this patent
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Abstract
In a method for producing a gate structure for a MOS transistor, first, a layer sequence of oxide layer, auxiliary layer and masking layer is generated on a substrate, wherein the auxiliary layer and the masking layer are patterned to determine an edge separating an area of the oxide layer covered by these layers from an exposed area thereof. Afterwards, an oxidation is performed to generate an oxide ramp in the area of the edge. Then, the auxiliary layer is partly removed to generate a hollow space of predetermined length between the oxide layer and the masking layer. A gate electrode material is introduced into the hollow space for generating a gate electrode.
Claims20
A method for producing a gate structure for an MOS transistor, comprising:
- generating a layer sequence of an oxide layer, an auxiliary layer and a masking layer on a substrate, wherein the auxiliary layer and the masking layer are structured to determine an edge separating an area of the oxide layer covered with these layers from an exposed area thereof;
- performing an oxidation to generate an oxide ramp in the area of the edge;
- partly removing the auxiliary layer to generate a hollow space of a predetermined length between the oxide layer and the masking layer;
- and
- introducing a gate electrode material into the hollow space to generate a gate electrode.
A method for producing a gate structure for an MOS transistor, comprising:
- generating a structure on a substrate, the structure having at least an oxide layer and a masking layer, the masking layer disposed over a part of the oxide layer, the oxide layer including an oxide ramp, the masking layer including an inclined edge disposed above the oxide ramp, the structure further including a hollow space between the oxide layer and the masking layer;
- and
- introducing a gate electrode material into the hollow space to generate a gate electrode.
Dependencies are inferred from the claim text.