Methods of forming semiconductor circuitry, and semiconductor circuit constructions

A method of forming semiconductor circuitry, comprising:

• providing a first semiconductor structure;
• the first semiconductor structure comprising a first monocrystalline semiconductor substrate and a semiconductive material projection extending upwardly from an electrical connection with an electrical node supported by the first monocrystalline semiconductor substrate, the semiconductive material projection being conductively-doped to a first dopant type, the first dopant type being either n-type or p-type;
• bonding a second semiconductor structure onto the first semiconductor structure;
• the second semiconductor structure comprising a second monocrystalline semiconductor substrate;
• forming an electrically conductive interconnect extending into the second monocrystalline semiconductor substrate to electrically connect with the semiconductive material projection;
• the electrically conductive interconnect being conductively-doped to a second dopant type, the second dopant type being either n-type or p-type, and being a different type than the first dopant type;
• and
• wherein the electrical node supported by the first monocrystalline semiconductor substrate is a conductively-doped diffusion region within the first monocrystalline semiconductor substrate;
• wherein an isolation region extends within the first monocrystalline adjacent the conductively-doped diffusion region;
• and wherein the semiconductive material projection overlaps both the conductively-doped diffusion region and the isolation region.

A method of forming semiconductor circuitry, comprising:

• providing a first semiconductor structure;
• the first semiconductor structure comprising a first monocrystalline semiconductor substrate and a semiconductive material projection extending upwardly from an electrical connection with an electrical node supported by the first monocrystalline semiconductor substrate, the semiconductive material projection being conductively-doped to a first dopant type, the first dopant type being either n-type or p-type;
• bonding a second semiconductor structure onto the first semiconductor structure;
• the second semiconductor structure comprising a second monocrystalline semiconductor substrate;
• forming an electrically conductive interconnect extending into the second monocrystalline semiconductor substrate to electrically connect with the semiconductive material projection;
• the electrically conductive interconnect being conductively-doped to a second dopant type, the second dopant type being either n-type or p-type, and being a different type than the first dopant type;
• and
• wherein the electrically conductive interconnect and the semiconductive material projection join at an interface, and further comprising forming a metal suicide layer at the interface.

A method of forming semiconductor circuitry, comprising:

• providing a first semiconductor structure;
• the first semiconductor structure comprising a first monocrystalline semiconductor substrate and a semiconductive material projection extending upwardly from an electrical connection with an electrical node supported by the first monocrystalline semiconductor substrate, the semiconductive material projection being conductively-doped to a first dopant type, the first dopant type being either n-type or p-type;
• bonding a second semiconductor structure onto the first semiconductor structure;
• the second semiconductor structure comprising a second monocrystalline semiconductor substrate;
• forming an electrically conductive interconnect extending into the second monocrystalline semiconductor substrate to electrically connect with the semiconductive material projection;
• the electrically conductive interconnect being conductively-doped to a second dopant type, the second dopant type being either n-type or p-type, and being a different type than the first dopant type;
• and
• wherein the electrically conductive interconnect and the semiconductive material projection join at an interface, and further comprising forming a metal nitride layer at the interface.

A method of forming semiconductor circuitry, comprising:

• providing a first semiconductor structure;
• the first semiconductor structure comprising a first monocrystalline semiconductor substrate and a semiconductive material projection extending upwardly from an electrical connection with an electrical node supported by the first monocrystalline semiconductor substrate, the semiconductive material projection being conductively-doped to a first dopant type, the first dopant type being either n-type or p-type;
• bonding a second semiconductor structure onto the first semiconductor structure;
• the second semiconductor structure comprising a second monocrystalline semiconductor substrate;
• forming an electrically conductive interconnect extending into the second monocrystalline semiconductor substrate to electrically connect with the semiconductive material projection;
• the electrically conductive interconnect being conductively-doped to a second dopant type, the second dopant type being either n-type or p-type, and being a different type than the first dopant type;
• and
• wherein the electrically conductive interconnect and the semiconductive material projection join at an interface;
• wherein the semiconductive material of the semiconductive material projection is silicon;
• wherein the electrically conductive interconnect comprises silicon, and further comprising forming a metal silicide layer at the interface.

A method of forming semiconductor circuitry, comprising:

• providing a first semiconductor structure;
• the first semiconductor structure comprising a first monocrystalline semiconductor substrate and a semiconductive material projection extending upwardly from an electrical connection with an electrical node supported by the first monocrystalline semiconductor substrate, the semiconductive material projection being conductively-doped to a first dopant type, the first dopant type being either n-type or p-type;
• bonding a second semiconductor structure onto the first semiconductor structure;
• the second semiconductor structure comprising a second monocrystalline semiconductor substrate;
• forming an electrically conductive interconnect extending into the second monocrystalline semiconductor substrate to electrically connect with the semiconductive material projection;
• the electrically conductive interconnect being conductively-doped to a second dopant type, the second dopant type being either n-type or p-type, and being a different type than the first dopant type;
• and
• wherein the electrically conductive interconnect and the semiconductive material projection join at an interface;
• wherein the semiconductive material of the semiconductive material projection is silicon;
• wherein the electrically conductive interconnect comprises silicon, and further comprising forming a metal nitride layer at the interface.

A method of forming semiconductor circuitry, comprising:

• providing a first semiconductor structure;
• the first semiconductor structure comprising a first monocrystalline semiconductor substrate and a semiconductive material projection extending upwardly from an electrical connection with an electrical node supported by the first monocrystalline semiconductor substrate, the semiconductive material projection being conductively-doped to a first dopant type, the first dopant type being either n-type or p-type;
• bonding a second semiconductor structure onto the first semiconductor structure;
• the second semiconductor structure comprising a second monocrystalline semiconductor substrate;
• forming an electrically conductive interconnect extending into the second monocrystalline semiconductor substrate to electrically connect with the semiconductive material projection;
• the electrically conductive interconnect being conductively-doped to a second dopant type, the second dopant type being either n-type or p-type, and being a different type than the first dopant type;
• and
• out-diffusing conductivity-enhancing dopant of the second dopant type from the electrically conductive interconnect and into the second monocrystalline semiconductor substrate.

A method of forming semiconductor circuitry, comprising:

• providing a first semiconductor structure;
• the first semiconductor structure comprising a first monocrystalline semiconductor substrate and a semiconductive material projection extending upwardly from an electrical connection with an electrical node supported by the first monocrystalline semiconductor substrate, the semiconductive material projection being conductively-doped to a first dopant type, the first dopant type being either n-type or p-type;
• bonding a second semiconductor structure onto the first semiconductor structure;
• the second semiconductor structure comprising a second monocrystalline semiconductor substrate;
• forming an electrically conductive interconnect extending into the second monocrystalline semiconductor substrate to electrically connect with the semiconductive material projection;
• the electrically conductive interconnect being conductively-doped to a second dopant type, the second dopant type being either n-type or p-type, and being a different type than the first dopant type;
• and
• wherein the electrically conductive interconnect and the semiconductive material projection join at an interface;
• wherein the semiconductive material of the semiconductive material projection is silicon;
• wherein the electrically conductive interconnect comprises silicon, and further comprising:
• forming a metal silicide layer at the interface of the electrically conductive interconnect and the semiconductive material projection;
• and
• out-diffusing conductivity-enhancing dopant of the second dopant type from the electrically conductive interconnect and into the second monocrystalline semiconductor substrate.

A semiconductor circuitry construction, comprising:

• a first semiconductor structure;
• the first semiconductor structure comprising a first monocrystalline semiconductor substrate having an insulative mass thereover;
• the first semiconductor structure also comprising a conductively doped semiconductive material projection extending through the insulative mass;
• the conductively doped semiconductive material projection being a first dopant type;
• the first dopant type being either n-type or p-typed;
• a second semiconductor structure bonded to the first semiconductor structure;
• the second semiconductor structure comprising a second monocrystalline semiconductor substrate;
• an electrically conductive interconnect extending within the second monocrystalline semiconductor substrate and electrically connecting with the semiconductive material projection at an interface of the electrical conductive interconnect and the semiconductive material projection;
• the electrically conductive interconnect being a second dopant type semiconductive material;
• the second dopant type being either n-type or p-type, and being a different type than the first dopant type;
• and
• a metal suicide layer at the interface of the electrically conductive interconnect and the semiconductive material projection.

A semiconductor circuitry construction, comprising:

• a first semiconductor structure;
• the first semiconductor structure comprising a first monocrystalline semiconductor substrate having an insulative mass thereover;
• the first semiconductor structure also comprising a conductively doped semiconductive material projection extending through the insulative mass;
• the conductively doped semiconductive material projection being a first dopant type;
• the first dopant type being either n-type or p-type;
• a second semiconductor structure bonded to the first semiconductor structure;
• the second semiconductor structure comprising a second monocrystalline semiconductor substrate;
• an electrically conductive interconnect extending within the second monocrystalline semiconductor substrate and electrically connecting with the semiconductive material projection at an interface of the electrical conductive interconnect and the semiconductive material projection;
• the electrically conductive interconnect being a second dopant type semiconductive material;
• the second dopant type being either n-type or p-type;
• and being a different type than the first dopant type;
• and
• a metal nitride layer at the interface of the electrically conductive interconnect and the semiconductive material projection.