Semiconductor memory and process for fabricating the same
AssigneeNEC Electronics Corporation
InventorsSota Shinohara, Koichi Takemura, Yasuhiro Tsujita, Hidemitsu Mori
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Abstract
In a semiconductor memory, a barrier layer formed of a first metal film, a metal nitride film and a second metal film laminated in the named order is formed under a lower electrode of a ferroelectric capacitor in a memory cell, in order to minimize a pealing and lifting of the lower electrode from an underlying plug in the process of forming a ferroelectric material film as a capacitor dielectric film and in its succeeding annealing process. The metal nitride film is formed of a nitride of a metal constituting the first or second metal film.
Claims11
In a process for fabricating a semiconductor memory, a process of forming a capacitor on a semiconductor substrate, comprising the steps of:
- forming a barrier layer comprising a triplelayer structure of a first metal film, a metal nitride film and a second metal film formed in the named order, said barrier film having a lower surface connected to an upper end of a conducting member having a lower end connected to an underlying layer;
- forming a lower electrode on an upper surface of said barrier layer;
- forming a dielectric film on an upper surface of said lower electrode;
- and
- forming an upper electrode on an upper surface of said dielectric film.
Dependencies are inferred from the claim text.