MOSFET performance improvement using deformation in SOI structure
AssigneeInternational Business Machines Corporation
InventorsDureseti Chidambarrao, Omer H. Dokumaci
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Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming a semiconductor layer on a substrate. The first region of the substrate is expanded to push up the first portion of the semiconductor layer, thereby applying tensile stress to the first portion. The second region of the substrate is compressed to pull down the second portion of the semiconductor layer, thereby applying compressive stress to the second portion. An N type device is formed over the first portion of the semiconductor layer, and a P type device is formed over the second portion of the semiconductor layer.
Claims12
A method for manufacturing a semiconductor device, comprising steps of:
- forming a semiconductor layer on a substrate;
- expanding a first region of the substrate to push up a first portion of the semiconductor layer, including ion-implanting an expansion element in the first region of the substrate;
- compressing a second region of the substrate to pull down a second portion of the semiconductor layer, including ion-implanting a compression element in the second region of the substrate;
- forming an N type device over the first portion of the semiconductor layer;
- and
- forming a P type device over the second portion of the semiconductor layer.
A method of manufacturing a semiconductor device, comprising steps of:
- forming a semiconductor layer on a substrate;
- selectively ion-implanting an expansion element in a first region of the substrate;
- selectively ion-implanting a compression element in a second region of the substrate;
- annealing to expand the first region and to compress the second region, wherein the expanded first region pushes up a first portion of the semiconductor layer and the compressed second region pulls down a second portion of the semiconductor layer;
- and
- forming an N type device on the first portion of the semiconductor layer;
- and forming a P type device on the second portion of the semiconductor layer.
Dependencies are inferred from the claim text.