Mixed-mode process
AssigneeUnited Microelectronics Corp.
InventorChing-Huei Tsai
Life of this patent
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Abstract
A mixed-mode process comprises to provide a substrate first. A surface of the substrate comprises at least a first conductor in a first conductive region, at least a second conductor in a second conductive region, at least a metal-oxide-semiconductor (MOS) transistor in a MOS transistor region, and at least a capacitor in a capacitor region. A mask is then formed on the substrate to expose the second conductor. A first etching process is thereafter performed to remove a specific thickness of the second conductor followed by a first ion implantation process to dope the second conductor with the first type dopants.
Claims16
A mixed-mode process for integration circuits comprising:
- providing a semiconductor substrate, a surface of the semiconductor substrate comprising at least a first conductor formed in a first conductive region, at least a second conductor formed in a second conductive region, at least a metal-oxide-semiconductor (MOS) transistor formed in a MOS transistor region, and at least a capacitor formed in a capacitor region;
- forming a mask on the semiconductor substrate to cover the MOS transistor, the first conductor, and the capacitor and to expose the second conductor;
- performing a first etching process to remove a specific thickness of the second conductor;
- and
- performing a first ion implantation process to dope the second conductor with first type dopants;
- wherein the order of the first etching process and the first ion implantation process can be switched.
Dependencies are inferred from the claim text.