Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
AssigneeCermet, Inc.
InventorsJeffrey E. Nause, Joseph Owen Maciejewski, Vincente Munne, Shanthi Ganesan
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Abstract
A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a direction parallel or oblique to the substrate. The p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas substantially in a vertical direction toward the substrate to press the reaction gas against the entire surface of the substrate.
Claims28
A method of depositing a zinc oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique, comprising:
- heating the substrate;
- and
- supplying reaction gases comprising a first gas containing a zinc compound, a second gas containing oxygen, a third p-type dopant gas with at least one element from one of Groups IA, IB, VA and VB of the periodic table of the elements, and a fourth inert carrier gas used to carry the reaction gases to the surface of the heated substrate to grow the zinc-oxide-based II-VI Group compound semiconductor crystal layer on the substrate.
Dependencies are inferred from the claim text.