Process for producing high quality PZT films for ferroelectric memory integrated circuits

A method for fabrication of ferroelectric capacitor elements of an Integrated circuit comprising:

• deposition of an electrically conductive bottom electrode layer comprising a noble metal;
• deposition of a layer of ferroelectric dielectric material;
• annealing the layer of ferroelectric dielectric material to form perovskite phases with a first anneal in an environment comprising oxygen at a first partial pressure;
• deposition of an electrically conductive top electrode layer comprising a noble metal oxide;
• and
• annealing the layer of ferroelectric dielectric material with a second anneal, the second anneal changing the layer of ferroelectric material into grains having a columnar structure, being performed in an environment comprising oxygen, the oxygen having a second partial pressure less than the first partial pressure and performed after the step of deposition of an electrically conductive top electrode layer.

A method for fabrication of ferroelectric capacitor elements of an Integrated circuit comprising:

• deposition of an electrically conductive bottom electrode layer comprising a noble metal:
• deposition of a layer of ferroelectric dielectric material by a sputtering method;
• annealing the layer of ferroelectric dielectric material to form perovskite phases with a first anneal at a first temperature;
• deposition of an electrically conductive top electrode layer comprising a noble metal oxide;
• and
• annealing the layer of ferroelectric dielectric material with a second anneal at a second temperature higher than the first temperature, the second anneal changing the layer of ferroelectric material into grains having a columnar structure, being performed by rapid thermal annealing after the step of deposition of an electrically conductive top electrode layer.