Method for structuring a photoresist layer

A method for structuring a photoresist layer, which comprises the steps of:

• providing a substrate having a photoresist layer applied thereto at least in parts, the photo-resist layer containing:
• a film-forming polymer having molecular groups which can be converted into alkali-soluble groups by acid-catalyzed cleavage reactions;
• a photo acid generator which liberates an acid on exposure to a first light having a defined wavelength range Δλ2;
• and
• a photo base generator which liberates a base on exposure to a second light having a defined wavelength range Δλ2;
• exposing the photoresist layer in parts to the first light having the defined wavelength range Δλ1, a wavelength of the first light being chosen so that the photo base generator is substantially inert to irradiation:
• exposing the photoresist layer to the second light having the defined wavelength range Δλ2, a wavelength of the second light being chosen so that the photo acid generator is substantially inert to the irradiation;
• heating the photoresist layer to a temperature at which a cleavage reaction catalyzed by photolytically produced acid takes place;
• and
• developing the photoresist layer;
• the molecular groups which can undergo the acid-catalyzed cleavage reactions being groups having a structure according to one of:
• formula II:
• in which R1 is selected from the group consisting of tert-alkyl groups, tert-butyl groups, tetrahydrofuranyl groups, tetrahydropyranyl groups, tert-butoxycarbonyloxy groups, acetal groups;
• and groups having a structure according to one of formula III, IV and V:
• in which:
• R1, R2 and R3, independently of one another, are selected from the group consisting of methyl, ethyl, propyl and butyl;
• and
• R4, R5 and R6, independently of one another, are selected from the group consisting of hydrogen, methyl, ethyl, propyl and butyl with a condition that only R4 and R5 may be hydrogen and R6 is not hydrogen.

A method for structuring a photoresist layer, which comprises the steps of:

• providing a substrate having a photoresist layer applied thereto at least in parts, the photo-resist layer containing:
• a film-forming polymer having molecular groups which can be converted into alkali-soluble groups by acid-catalyzed cleavage reactions;
• a photo acid generator which liberates an acid on exposure to a first light having a defined wavelength range Δλ1;
• and
• a photo base generator which liberates a base on exposure to a second light having a defined wavelength range Δλ2;
• exposing the photoresist layer in parts to the first light having the defined wavelength range Δλ1, a wavelength of the first light being chosen so that the photo base generator is substantially inert to irradiation;
• exposing the photoresist layer to the second light having the defined wavelength range Δλ2, a wavelength of the second light being chosen so that the photo acid generator is substantially inert to the irradiation;
• heating the photoresist layer to a temperature at which a cleavage reaction catalyzed by photolytically produced acid takes place;
• and
• developing the photoresist layer with a solution of 2.38% by weight of tetramethylammonium hydroxide in water.