Multi-layered resist structure and manufacturing method of semiconductor device

A semiconductor device manufacturing method comprising the steps of:

• forming a lower resist layer on a patterning objective layer;
• forming an organic intermediate layer made of organic silicon-containing material, having no Si—O bond in its structure, on the lower resist layer;
• forming an upper resist layer made of alicyclic resin on the organic intermediate layer;
• forming a pattern by exposing/developing the upper resist layer;
• transferring the pattern of the upper resist layer onto the organic intermediate layer by etching the organic intermediate layer while using the upper resist layer as a mask;
• transferring a pattern of the organic intermediate layer onto the lower resist layer by etching the lower resist layer while using the organic intermediate layer as a mask;
• and
• patterning the patterning objective layer by etching the patterning objective layer while using the lower resist layer and the organic intermediate layer as a mask, and the organic intermediate layer is etched simultaneously with etching of the patterning object layer.

A semiconductor device manufacturing method comprising the steps of:

• forming a lower resist layer on a patterning objective layer;
• forming an organic intermediate layer made of organic silicon-containing material, having no Si—O bond in its structure, on the lower resist layer;
• forming an upper resist layer made of alicylic resin on the organic intermediate layer;
• forming a pattern by exposing/developing the upper resist layer;
• transferring the pattern of the upper resist layer onto the organic intermediate layer by etching the organic intermediate layer while using the upper resist layer as a mask;
• transferring a pattern of the organic intermediate layer onto the lower resist layer by etching the lower resist layer while using the organic intermediate layer as a mask, and simultaneously the upper resist layer is etched and removed;
• and
• patterning the patterning objective layer by etching the patterning objective layer while using the lower resist layer and the organic intermediate layer as a mask.

A semiconductor device manufacturing method comprising the steps of:

• forming a lower resist layer on a patterning objective layer, the lower resist layer which is thicker than a thickness of the patterning objective layer;
• forming an organic intermediate layer made of organic silicon-containing material, having no Si—O bond in its structure, on the lower resist layer;
• forming an upper resist layer made of alicylic resin on the organic intermediate layer;
• forming a pattern by exposing/developing the upper resist layer;
• transferring the pattern of the upper resist layer onto the organic intermediate layer by etching the organic intermediate layer while using the upper resist layer as a mask;
• transferring a pattern of the organic intermediate layer onto the lower resist layer by etching the lower resist layer while using the organic intermediate layer as a mask;
• and
• patterning the patterning objective layer by etching the patterning objective layer while using the lower resist layer and the organic intermediate layer as a mask.