Chemical amplification resist composition
AssigneeMitsubishi Rayon Co., Ltd.
InventorsTadayuki Fujiwara, Yukiya Wakisaka, Masayuki Tooyama
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Abstract
The present invention discloses a chemically amplified resist composition comprising: a resin which becomes soluble in an aqueous alkali solution in the presence of an acid, a photo acid generator, and an amine derivative which shows, in water of 25° C., such a basicity as to form a conjugate acid and has a medium polarity. The amine derivative acts as a quencher. Therefore, the chemically amplified resist composition of the present invention enables formation of a very precise and fine resist pattern and can be suitably used particularly in a lithography using an ArF excimer laser beam.
Claims13
A chemically amplified resist composition, comprising
- a resin which becomes soluble in an aqueous alkali solution in the presence of an acid,
- a photo acid generator, and
- an amine derivative which shows, in water of 25° C., a basicity as to form a conjugate acid and has a medium polarity, wherein the amine derivative is an amide compound represented by formula (1):
- wherein R1, R2 and R3 are each independently hydrogen or an alkl group having from 1 to 30 carbon atoms, and wherein at least one of R1 and R2 is a cyclic alkyl group having 3 to 30 carbon atoms.
A chemically amplified resist composition comprising a resin soluble in an aqueous alkali solution in the presence of an acid, which is a polymer comprising a (meth)acrylic acid ester monomer unit having an alicyclic skeleton, and a (meth)acrylic acid ester monomer unit having a lactone skeleton;
- a photo acid generator;
- and
- an amine derivative which shows, in water of 25° C., a basicity as to form a conjugate acid and has a medium polarity.
A chemically amplified resist composition which gives a line width difference between resist top and resist bottom, of 4% or less, in a resist pattern of 0.12 micron formed,
- when the resist composition is coated on bare silicon to form a resist of 0.5 micron in thickness, a light of 193 nm emitted from an argon fluorine excimer laser is applied to the resist at an exposure of 5 mJ/cm2 or less through a mask having a pattern of line/space=1/1 to project the pattern to the resist in ¼ reduction, and the resulting resist is heat-treated at 120° C. for 60 seconds and subjected to development with a 2.38 mass % aqueous tetramethylammonium hydroxide solution of 23° C. for 60 seconds.
Dependencies are inferred from the claim text.