Oxidative conditioning compositions for metal oxide layer and applications thereof
AssigneeMicron Technology, Inc.
InventorAlan R. Reinberg
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Abstract
A metal oxide layer may made more highly oxidized by exposing the layer to sulfur trioxide. The leakage current of the layer may thereby be decreased, providing a capacitor containing such a layer with improved performance properties. The capacitor may be incorporated into a dynamic random access memory cell or other structure useful in the semiconductor or other industry.
Claims18
An article having a composition comprising a metal oxide layer selected from the group consisting of substoichemetric tantalum oxide, or a mineral selected from the group consisting of braunite, cassiterite, cuprite, hollandite, limenite, magnetite, manganite, melaconite, psilomelane, pyrolusite, rutile, and uraninite, in contact with sulfur trioxide.
Dependencies are inferred from the claim text.