Method for metal oxide thin film deposition via MOCVD
AssigneeSharp Laboratories of America, Inc.
InventorsWei-Wei Zhuang, Sheng Teng Hsu, Wei Pan
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Abstract
An MOCVD process is provided for forming metal-containing films having the general formula M′xM″(1−x)MyOz, wherein M′ is a metal selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Y, Sc, Yb, Lu, and Gd; M″ is a metal selected from the group consisting of Mg, Ca, Sr, Ba, Pb, Zn, and Cd; M is a metal selected from the group consisting of Mn, Ce, V, Fe, Co, Nb, Ta, Cr, Mo, W, Zr, Hf and Ni; x has a value from 0 to 1; y has a value of 0, 1 or 2; and z has an integer value of 1 through 7. The MOCVD process uses precursors selected from alkoxide precursors, β-diketonate precursors, and metal carbonyl precursors in combination to produce metal-containing films, including resistive memory materials.
Claims44
An MOCVD process comprising:
- a) providing a substrate within an MOCVD reactor;
- b) introducing an alkoxide precursor into the MOCVD reactor containing the substrate;
- c) introducing a second metal-containing precursor into the MOCVD reactor containing the substrate;
- and
- d) forming a metal-containing film overlying the substrate;
- wherein the metal-containing film has the formula M′xM″(1−x)MyOz, wherein M′ is a metal selected from the group consisting of La, Ce, Pr, Nd,.Pm, Sm, Y, Sc, Yb, Lu, and Gd;
- M″ is a metal selected from the group consisting of Mg, Ca, Sr, Ba, Pb, Zn, and Cd;
- M is a metal selected from the group consisting of Mn;
- Ce, V, Fe, Co, Nb, Ta, Cr, Mo, W, Zr, Hf and Ni;
- x has a value from 0 to 1;
- y has a value of 0, 1 or 2;
- and z has an integer value of 1 through 7.
An MOCVD process comprising:
- a) providing a substrate within an MOCVD reactor;
- b) introducing a metal-carbonyl precursor into the MOCVD reactor containing the substrate;
- c) introducing a second metal-containing precursor into the MOCVD reactor containing the substrate;
- and
- d) forming a metal-containing film overlaying the substrate;
- wherein the metal-containing film has the formula M′xM″(1−x)MyOz, wherein M′ is a metal selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Y, Sc, Yb, Lu, and Gd;
- M″ is a metal selected from the group consisting of Mg, Ca, Sr, Ba, Pb, Zn, and Cd;
- M is a metal selected from the group consisting of Mn, Ce, V. Fe, Go, Nb, Ta, Cr, Mo, W, Zr, Hf, and Ni;
- x has a value from 0 to 1;
- y has a value of 0, 1, or 2;
- and z has an integer value of 1 through 7.
An MOCVD process for forming a metal-containing film, having a formula M′xM″(1−x)MyOx, wherein M′ is a metal selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Y, Sc, Yb, Lu, and Gd;
- M″ is a metal selected from the group consisting of Mg, Ca, Sr, Ba, Pb, Zn;
- Cd;
- M is a metal selected from the group consisting of Mn, Ce, V, Fe, Co, Nb, Ta, Cr, Mo, W, Zr, Hf and Ni;
- x has a value between 0 and 1;
- y has a value of 0, 1 or 2;
- and z has an integer value of 1 through 7, on a substrate comprising:
- a) introducing a metal-beta diketone precursor having the formula Mo(tmhd)u, wherein Mo is a metal selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Y, Sc, Yb, Lu, Gd, Mg, Ca, Sr, Ba, Pb, Zn, Cd, Mn, Fe, Co, Cr, Mo, Zr, Hf, and Ni;
- and u has a value of 2, 3 or 4 into an MOCVD chamber containing the substrate;
- b) introducing a second metal-containing precursor into a reactor containing the substrate, wherein the second metal containing precursor is an alkoxide precursor or a metal-carbonyl precursor into the MOCVD chamber containing the substrate;
- and
- c) introducing oxygen into the MOCVD chamber containing the substrate.
Dependencies are inferred from the claim text.