Method for forming a copper thin film
AssigneeAnelva Corporation
InventorsAtsushi Sekiguchi, Masami Shibagaki, Tomoaki Koide, Takafumi Kuninobu, Kaoru Suzuki
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Abstract
A method for forming a Cu thin film on a substrate includes a Cu-CVD step forming a first copper film on predetermined surface of a substrate by a CVD process and a plating step further forming a second copper film on the first copper film by an eletrolytic copper plating process using the first copper film as an electrode. A modifying step modifies the first copper film by exposing it in an active atmosphere between the Cu-CVD step and the plating step. Fine voids can thereby be effectively prevented from being formed in the vicinity of the interface between the first copper film and the second copper film.
Claims40
A method for forming a Cu thin film comprising a Cu-CVD step of forming a first copper film on a predetermined surface of a substrate by a CVD process and a plating step further forming a second copper film on the first copper film by an electrolytic copper plating process using the first copper film as an electrode,
- wherein a modifying step modifying the first copper film by exposing it in an active atmosphere is interposed between the Cu-CVD step and the plating step.
A method for forming a Cu thin film comprising:
- forming a first copper film on a predetermined surface of a substrate by a CVD process,
- after said forming a first copper film, modifying the first copper film by exposing the first copper film in an active atmosphere, the active atmosphere being produced by one of (a) plasma and (b) a free activated species created by thermally decomposing molecules;
- and
- after said modifying the first copper film, forming a second copper film on the first copper film by an electrolytic copper plating process that uses the first copper film as an electrode.
Dependencies are inferred from the claim text.