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US 6,887,513 B2Granted
Method for fabricating a magnetoresistive film and magnetoresistive film
AssigneeNagoya University
InventorsYutaka Moritomo, Xiaojun Liu
Life of this patent
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Abstract
A double perovskite type oxide film is formed on a given single crystalline substrate. Then, the oxide film in set in an oxygen-including atmosphere, thereby to be oxidized. As a result, oxygen is introduced excessively into the oxide film, to form half metal/insulator/half metal junction and thus, create a MR effect therein.
Claims5
A method for fabricating a magnetoresistive film, comprising the steps of:
- preparing a single crystalline substrate,
- forming a double perovskite type oxide film on said single crystalline substrate, and
- oxidizing said oxide film in an oxygen-including atmosphere, thereby to introduce excess oxygen in said oxide film.
Dependencies are inferred from the claim text.