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US 6,887,437 B1Granted
Reactor configuration and method for producing it
AssigneeInfineon Technologies AG
InventorsVolker Lehmann, Stefan Ottow, Reinhard Stengl, Hans Reisinger, Hermann Wendt
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Abstract
A reactor configuration contains a housing connected to a silicon wafer. The silicon wafer has pores extending from a first main area of the silicon wafer into an interior of the silicon wafer, preferably as far as a second main area of the silicon wafer. A catalyst layer at least partly covers the surface of the pores.
Claims8
A reactor configuration, comprising:
- a housing;
- a silicon wafer disposed in said housing and monolithically connected to parts of said housing, said silicon wafer having a first main area, a second main area, and a reaction space formed therein with pores formed therein running from said reaction space to said first main area and from said reaction space to said second main area;
- and
- a catalyst layer at least partly covering a surface defining said pores;
- said housing having a first feed formed therein, a second feed formed therein adjacent said second main area, and a third feed formed therein adjacent said first main area and via which reactants can be fed in independently of said first feed.
2 more elements
A method for producing a reactor configuration, which comprises the steps of:
- providing a silicon wafer;
- electrochemically etching pores in the silicon wafer using an acidic, fluoride-containing electrolyte with respect to which the silicon wafer is connected up as an anode, the etching step including:
- setting a constant current density in a course of the electrochemical etching until the pores have reached a first depth measured from a first main area of the silicon wafer;
- increasing the current density after the first depth has been reached, with a result that a diameter of the pores increases and adjacent pores grow together to form a reaction space;
- and
- reducing the current density after a second depth has been reached, with a result that separate pores grow from the second death as far as a second main area of the silicon wafer;
- at least partially covering a surface defining the pores with a catalyst layer;
- placing the silicon wafer in a housing and monolithically connecting the silicon wafer to parts of the housing, the housing having a first feed formed therein, a second feed formed therein adjacent the second main area of the silicon wafer, and a third feed formed therein adjacent the first main area of the silicon wafer, reactants being fed in via the third feed independently of the first feed.
5 more elements
Dependencies are inferred from the claim text.