Light emitting device and method of manufacturing the same

A method of manufacturing a light emitting device, said method comprising:

• forming a second organic compound layer on a first organic compound layer;
• forming a first conductive film on the second organic compound layer;
• etching a portion of the second organic compound layer by a wet etching,
• wherein the portion of the second organic compound layer does not overlap the first conductive film;
• forming a third organic compound layer on the first organic compound layer;
• forming a second conductive film on the third organic compound layer;
• etching a portion of the third organic compound layer and a portion of the first organic compound layer by irradiating with O2 plasma, wherein the portion of the first organic compound layer does not overlap the first and second conductive films, and wherein the portion of the third organic compound layer does not overlap the second conductive film,
• wherein the first organic compound layer is formed by applying a solution including a protic solvent,
• wherein each of the second and third organic compound layers is formed by applying a solution including an aprotic solvent.

A method of manufacturing a light emitting device, and method comprising:

• forming an anode on an insulating surface;
• forming an insulating film to cover edges of the anode;
• forming a first organic compound layer on the anode and the insulating film;
• forming a second organic compound layer on the first organic compound layer;
• forming a first conductive film on the second organic compound layer;
• etching a portion of the second organic compound layer by a wet etching, wherein the portion of the second organic compound layer does not overlap the first conductive film;
• forming a third organic compound layer on the first organic compound layer;
• forming a second conductive film on the third organic compound layer;
• etching a portion of the third organic compound layer by a wet etching, wherein the portion of the third organic compound layer does not overlap the second conductive film;
• forming a fourth organic compound layer on the first organic compound layer;
• forming a third conductive film on the fourth organic compound layer;
• etching a portion of the fourth organic compound layer and a portion of the first conductive film by dry etching, wherein the portion of the fourth organic compound layer does not overlap the third conductive film, and wherein the portion of the first organic compound layer does not overlap the first, second and third conductive films.

A method of manufacturing a light emitting device, said method comprising:

• forming an anode on an insulating surface;
• forming an insulating film to cover edges of the anode;
• forming a first organic compound layer on the anode and the insulating film;
• forming a second organic compound layer on the first organic compound layer;
• forming a first conductive film on the second organic compound layer;
• etching a portion of the second organic compound layer by a wet etching, wherein the portion of the second organic compound layer does not overlap the first conductive film;
• forming a third organic compound layer on the first organic compound layer;
• forming a second conductive film on the third organic compound layer;
• etching a portion of the third organic compound layer by a wet etching, wherein the portion of the third organic compound layer does not overlap the second conductive film;
• forming a fourth organic compound layer on the first organic compound layer;
• forming a third conductive film on the fourth organic compound layer;
• etching a portion of the fourth organic compound layer and a portion of the first conductive film by irradiating with O2 plasma, wherein the portion of the fourth organic compound layer does not overlap the third conductive film, and wherein the portion of the first organic compound layer does not overlap the first, second and third conductive films.