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US 6,887,311 B2Granted
Method of forming ohmic electrode
AssigneeSharp Kabushiki Kaisha
InventorsMayuko Fudeta, Toshio Hata
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Abstract
There is provided a method of forming an ohmic electrode, including the steps of: forming a hafnium layer on a surface of an n type nitride-based compound semiconductor layer to have a thickness of 1 to 15 nm; forming an aluminum layer on the hafnium layer; and annealing the hafnium layer and the aluminum layer to form a layer formed of hafnium and aluminum mixed together.
Claims3
A method of forming an ohmic electrode, the method comprising:
- forming a hafnium layer on a surface of an n type nitride-based compound semiconductor layer to have a thickness of 1 to 15 nm;
- forming an aluminum layer on the hafnium layer and;
- and
- annealing the hafnium layer and the aluminum layer to form a layer formed of hafnium and aluminum mixed together, so that after said annealing the layer formed comprising hafnium and aluminum mixed together has an Hf content from 0.001 to 50% in a vicinity of an interface between the nitride-based compound semiconductor layer and the layer formed comprising hafnium and aluminum mixed together.
1 more element
Dependencies are inferred from the claim text.