High-k gate dielectrics prepared by liquid phase anodic oxidation
AssigneeNational Taiwan University
InventorsJenn-Gwo Hwu, Yen-Po Lin, Szu-Wei Huang
Life of this patent
Estimating the term…
Abstract
A method of preparing high-k gate dielectrics by liquid phase anodic oxidation, which first produces a metallic film on the surface of a clean silicon substrate, next oxidizes the metallic film to form a metallic oxide as a gate oxidizing layer by liquid phase anodic oxidation, then promoting quality of the gate oxidizing layer by processing a step of thermal annealing. With this oxidation, a gate dielectric layer of high quality, high-k and ultrathin equivalent oxide thickness (EOT) can be produced, which can be integrated into a complementary metal oxide semiconductor (CMOS) production process directly.
Claims20
A method of preparing high-k gate dielectrics prepared by a liquid phase anodic oxidation, comprising the following steps:
- providing a silicon substrate and producing a metallic film on a clean surface of the silicon substrate, and
- then oxidizing the metallic film to form a metallic oxide as a gate oxidizing layer by liquid phase anodic oxidation, and performing thermal annealing to promote quality of the gate oxidizing layer.
A method of producing a metal oxide semiconductor field effect transistor that contains high-k gate dielectrics, including the steps of
- first producing a p-well and an n-well on a silicon substrate and filling an oxide for isolation;
- then producing a metallic film on a clean surface of said silicon substrate and to oxidizing said metallic film to form a metallic oxide as a gate-oxidizing layer by liquid phase anodic oxidation;
- next, to promote quality of said gate oxidizing layer, performing thermal annealing to form a gate layer on the gate metal oxidizing layer;
- defining a gate region and forming the gate, drain and source of the transistor by ion implantation;
- then depositing an oxide-isolating layer on the gate layer;
- etching a window of the gate, drain and source;
- and,
- then depositing a contact wire, and decreasing a concentration of junction traps by using thermal annealing.
Dependencies are inferred from the claim text.