Capacitive acceleration sensor
AssigneeAu Optronics Corporation
InventorChien-Sheng Yang
Life of this patent
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Abstract
A capacitive acceleration sensor includes a non-single-crystal-silicon-based substrate, a polysilicon beam structure having a movable section that includes a movable electrode, a polysilicon supporter positioned on the non-single-crystal-silicon-based substrate for fixing the beam structure and forming a distance between the beam structure and the non-single-crystal-silicon-based substrate, a stationary electrode positioned on the non-single-crystal-silicon-based substrate and opposite to the movable section of the beam structure, and a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate. The stationary electrode and the movable electrode constitute a plate capacitor, and the TFT control circuit is electrically connected to the plate capacitor.
Claims23
A capacitive acceleration sensor comprising:
- a non-single-crystal-silicon-based substrate;
- a polysilicon beam structure having a movable section, the movable section comprising a movable electrode;
- a polysilicon supporter positioned on the non-single-crystal-silicon-based substrate for fixing the beam structure and forming a distance between the beam structure and the non-single-crystal-silicon-based substrate;
- a stationary electrode positioned on the non-single-crystal-silicon-based substrate and opposite to the movable section of the beam structure, the stationary electrode and the movable electrode constituting a plate capacitor;
- and
- a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate and electrically connected to the plate capacitor.
A capacitive acceleration sensor comprising:
- an insulating substrate;
- a cantilever beam structure positioned on the insulating substrate having a movable section, the movable section comprising a movable electrode;
- a stationary electrode positioned on the insulating substrate and opposite to the movable section of the cantilever beam structure, the stationary electrode and the movable electrode constituting a plate capacitor;
- and
- a thin film transistor control circuit positioned on the insulating substrate and electrically connected to the plate capacitor, the thin film transistor control circuit being a low temperature polysilicon thin films transistors control circuit.
A capacitive acceleration sensor comprising:
- an insulating substrate;
- a cantilever beam structure positioned on the insulating substrate having a movable section, the movable section comprising a movable electrode;
- a stationary electrode positioned on the insulating substrate and opposite to the movable section of the cantilever beam structure, the stationary electrode and the movable electrode constituting a plate capacitor;
- and
- a thin film transistor control circuit positioned on the insulating substrate and electrically connected to the plate capacitor, the thin film transistor control circuit being a high temperature polysilicon thin film transistor control circuit.
Dependencies are inferred from the claim text.