Dynamic data restore in thyristor-based memory device

A method for dynamically restoring data in a thyristor-based memory device having a plurality of memory cells, each memory cell having a thyristor with an internal positive feedback loop, the method comprising:

• periodically applying a restore pulse for a short interval to each memory cell and therein restoring data in the cell using the internal positive feedback loop of the thyristor.

A method for maintaining a forward conducting state of a thyristor-based memory device, the method comprising:

• during a limited time period in which the thyristor can be restored into the forward conducting state after a holding current passing through the thyristor is removed, applying a pulse to the thyristor, the pulse being adapted to maintain the forward conducting state of the thyristor.

A method for dynamically restoring data in a memory device having a plurality of memory cell arrays and each memory cell having an internal positive feedback loop, the method comprising:

• periodically applying a restore pulse for a short interval to each memory cell, the periodically-applied pulse being adapted to restore a forward conducting state of an element in the memory cell in response to the internal positive feedback loop.

An electronic circuit arrangement, comprising:

• a plurality of memory cells, each memory cell having a thyristor with an internal positive feedback loop;
• and
• thyristor-state restoration means for periodically applying a restore pulse for a short interval to each memory cell and therein restoring data in the cell using the internal positive feedback loop of the thyristor.