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US 6,884,361 B2Granted
Method for making a mirror for photolithography
AssigneeIntel Corporation
InventorMichael Goldstein
Life of this patent
Estimating the term…
Abstract
A method for making a substrate for a mirror used in photolithography is described. That method comprises forming a crystalline layer on a first layer, which has a low coefficient of thermal expansion. Part of the crystalline layer is then removed to form on the first layer a second layer that has a high quality surface finish.
Claims9
A method for making a substrate for a mirror used in a photolithographic process for making a semiconductor device comprising:
- polishing and cleaning a first layer which has a low coefficient of thermal expansion and that comprises a low CTE glass or a low CTE alloy that is selected from the group consisting of a titanium silicate glass and a ceramic glass;
- forming a crystalline layer that comprises silicon on the first layer;
- forming a sacrificial layer that comprises silicon dioxide, which is grown by applying a rapid thermal anneal process to oxidize part of the crystalline layer;
- and
- then removing the sacrificial layer.
2 more elements
A method for making a mirror for photolithography comprising:
- polishing and cleaning a low CTE layer that comprises a low CTE glass or a low CTE alloy that is selected from the group consisting of titanium silicate glass and a ceramic glass;
- forming a silicon containing layer on the low CTE layer;
- applying a rapid thermal anneal process to convert part of the silicon containing layer into a sacrificial layer that comprises silicon dioxide;
- removing the sacrificial layer, and then
- forming a multi-layer coating on the remaining portion of the silicon containing layer.
2 more elements
A method for making a mirror for photolithography comprising:
- polishing and cleaning a low CTE layer that comprises a low CTE glass or a low CTE alloy that is selected from the group consisting of a titanium silicate glass and a ceramic glass;
- forming a silicon containing layer on the low CTE layer;
- oxidizing the silicon containing layer to form a sacrificial silicon dioxide layer by applying a rapid thermal anneal process to grow a silicon dioxide layer that is less than about 10 nanometers thick;
- removing the silicon dioxide layer using an isotropic etch process;
- and then
- forming on the remaining portion of the silicon containing lever a multi-layer coating that comprises alternating layers of molybdenum and silicon.
3 more elements
Dependencies are inferred from the claim text.