Plasma processing system and surface processing method
AssigneeCanon Kabushiki Kaisha
InventorNobumasa Suzuki
Life of this patent
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Abstract
A plasma processing system in which air in a plasma processing chamber is exhausted by an exhaust unit and a microwave is supplied to the plasma processing chamber through an annular waveguide which is provided at predetermined intervals in a circumferential direction on the same plane facing a surface of an object to be processed on the plasma processing chamber side to generate plasma within the plasma processing chamber. The annular waveguide is separated into two layers of an input side waveguide and an output side waveguide. The slots are provided between these waveguides at predetermined intervals in a circumferential direction.
Claims11
A plasma processing system in which gas is introduced into a plasma processing chamber, and a microwave is supplied to said plasma processing chamber through an annular waveguide having a plurality of slots provided at predetermined intervals in a circumferential direction on the same plane facing a surface of an object to be processed on the plasma processing chamber side to generate the plasma within said plasma processing chamber,
- wherein said annular waveguide is a two-layer structure of an input side waveguide and an output side waveguide whose central diameters are different from each other, and said slots are provided between said waveguides at predetermined intervals in a circumferential direction.
A surface processing method comprising:
- (a) introducing a gas into a plasma processing chamber;
- (b) supplying microwaves to said plasma processing chamber through an annular waveguide having a plurality of slots at predetermined intervals in a circumferential direction on the same plane, said annular waveguide having a two-layer structure of (i) an input side waveguide for receiving said microwaves and (ii) an output side waveguide for directing said microwaves toward a surface of an object in the plasma processing chamber said to generate a plasma within the plasma processing chamber;
- wherein said input side waveguide and said output side waveguide have different central diameters, and wherein said slots being provided between said input side waveguide and said output side waveguide;
- and
- (c) conducting surface processing of said object employing said plasma.
Dependencies are inferred from the claim text.