Laser diode having an active layer containing N and operable in a 0.6 μm wavelength band
AssigneeRicoh Company, Ltd.
InventorsNaoto Jikutani, Shunichi Sato, Takashi Takahashi
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Abstract
An optical semiconductor device operable in a 0.6 μm band includes an active layer of GaInNP sandwiched by a pair of GaInP layers each having a thickness of about 2 molecular layers or less.
Claims11
A method of fabricating a compound semiconductor device, comprising the steps of:
- (a) forming a first group III-V compound semiconductor layer not containing N epitaxially on a substrate;
- (b) exposing a surface of said first group III-V compound semiconductor layer to an atmosphere containing N;
- (c) forming, after said step (b), a second group III-V compound semiconductor layer on said first group III-V compound semiconductor layer epitaxially, said second group III-V compound semiconductor layer containing therein N as a group V element,
- wherein said atmosphere is substantially free from a group III element.
A method of fabricating a semiconductor layered structure comprising a first epitaxial layer of AlGaInNP having a composition represented by compositional parameters x1, y1 and z1 as Alx1Gay1In(1-x1-y1)Nz1P(1-z1) (0<x1<1, 0<y1≦1, 0<z1<1), a pair of second epitaxial layers of AlGaInP having a composition represented by compositional parameters x2 and y2 as Alx2Gay2In(1-x2-y2)P, each said second epitaxial layer being disposed adjacent to and respectively on either side of said first epitaxial layer, and a pair of third epitaxial layers of AlGaInP having a composition represented by compositional parameters x3 and y3 as Alx3Gay3In(1-x3-y3)P, each said third epitaxial layer being disposed respectively between said first and second epitaxial layers, said first through third epitaxial layers maintaining an epitaxy with each other, said compositional parameters being set so as to satisfy the relationship 0≦x3≦x1<x2≦1;
- 0<y3≦1, said method comprising the steps of:
- forming said second epitaxial layers by using a metal organic compound of Al for the source of Al;
- forming said first epitaxial layer by using a metal organic compound of Al for the source of Al;
- and
- forming said third epitaxial layers by using a metal organic compound of Al for the source of Al.
A method of fabricating a compound semiconductor device, comprising the steps of:
- (a) forming a first group III-V compound semiconductor layer not containing N epitaxially on a substrate;
- (b) introducing nitrogen into a surface of the first group III-V compound semiconductor layer by exposing said surface of said first group III-V compound semiconductor layer to an atmosphere containing N and substantially free from a group III element;
- and
- (c) forming, after said step (b), a second group III-V compound semiconductor layer on said first group III-V compound semiconductor layer epitaxially, said second group III-V compound semiconductor layer containing therein N as a group V element.
Dependencies are inferred from the claim text.