Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers

A method of planarizing a microelectronic workpiece, comprising:

• loading the microelectronic workpiece into a carrier assembly of a CMP machine, the microelectronic workpiece comprising a substrate including an outer layer comprising germanium, selenium, and up to 10 atomic percent silver;
• delivering a planarizing solution to a planarizing pad, the planarizing solution and planarizing pad comprising a planarizing medium, the planarizing solution comprising a fluid component having a pH of about 8-11.5 and a solid component comprising abrasive particles;
• and
• removing material of the outer layer from the workpiece by rubbing the outer layer against the planarizing medium with a controlled force, wherein the abrasive particles, the controlled force and a polishing linear velocity are selected to remove the material of the outer layer without substantial agglomeration of silver on a polished surface of the outer layer.

A method of planarizing a microelectronic workpiece, comprising:

• loading the microelectronic workpiece into a carrier assembly of a CMP machine, the microelectronic workpiece comprising a substrate including an outer layer comprising germanium, selenium, and up to 10 atomic percent silver;
• delivering a planarizing solution to a planarizing pad, the planarizing solution and planarizing pad comprising a planarizing medium, the planarizing solution comprising a fluid component having a pH of at least about 8 and a solid component comprising abrasive particles having a particle size of about 30-100 nm;
• and
• removing material of the outer layer from the workpiece by rubbing the outer layer against the planarizing medium with a controlled force, wherein the abrasive particles, the controlled force and a polishing linear velocity are selected to remove the material of the outer layer without substantial agglomeration of silver on a polished surface of the outer layer.

A method of planarizing a microelectronic workpiece, comprising:

• loading the microelectronic workpiece into a carrier assembly of a CMP machine, the microelectronic workpiece comprising a substrate including an outer layer comprising germanium, selenium, and up to 10 atomic percent silver;
• delivering a planarizing solution to a planarizing pad, the planarizing solution and planarizing pad comprising a planarizing medium, the planarizing solution comprising a fluid component having a pH of at least about 8 and a solid component comprising abrasive particles;
• and
• removing material of the outer layer from the workpiece by rubbing the outer layer against the planarizing medium with a controlled force of about 0.1-2 psi, wherein the abrasive particles, the controlled force and a polishing linear velocity are selected to remove the material of the outer layer without substantial agglomeration of silver on a polished surface of the outer layer.

A chemical-mechanical polishing system comprising:

• a carrier assembly including an actuator;
• a planarizing medium comprising a planarizing solution and a planarizing pad, the planarizing medium including an abrasive comprising abrasive particles having a mean particle size of about 30-50 nm and a Vickers hardness number of less than about 1500, the planarizing solution comprising a fluid component having a pH of about 8-11.5;
• a workpiece loaded into the carrier assembly, the workpiece having an outer layer comprising germanium and selenium which is oriented toward the planarizing medium;
• and
• a controller operatively coupled to the actuator, the controller controlling the actuator to control a down force of the outer layer against the polishing medium to a range of about 0.1-1.9 psi.

A chemical-mechanical polishing system comprising:

• a carrier assembly including an actuator;
• a planarizing medium comprising a planarizing solution and a planarizing pad, the planarizing medium including an abrasive comprising abrasive particles having a mean particle size of no greater than about 100 nm, the planarizing solution comprising a fluid component having a pH greater than 7;
• a workpiece loaded into the carrier assembly, the workpiece having a substrate and an outer layer oriented toward the planarizing medium, the outer layer comprising (GexSey)aAgb, wherein x is about 20-80, y is about 20-80, a is about 90-100, and b is about 0-10;
• and
• a controller operatively coupled to the actuator, the controller controlling the actuator to press the outer layer against the polishing medium with a controlled down force selected to reduce delamination of the outer layer from.

A chemical-mechanical polishing system comprising:

• a carrier assembly including an actuator;
• a planarizing medium comprising a planarizing solution and a planarizing pad, the planarizing medium including an abrasive comprising abrasive particles having a mean particle size of about 30-50 nm and a Vickers hardness number of less than about 1500, the planarizing solution comprising a fluid component having a pH of about 8-11.5;
• a workpiece loaded into the carrier assembly, the workpiece having a substrate and an outer layer oriented toward the planarizing medium, the outer layer comprising (GexSey)aAgb, wherein x is about 20-80, y is about 20-80, a is about 90-100, and b is about 0-10;
• and
• a controller operatively coupled to the actuator, the controller controlling the actuator to control a down force of the outer layer against the polishing medium to a range of about 0.1-1.9 psi.

A method of planarizing a microelectronic workpiece, comprising:

• positioning the microelectronic workpiece with respect to a planarizing pad, the microelectronic workpiece comprising a substrate including an outer layer comprising germanium, selenium, and up to 10 atomic percent silver;
• delivering a planarizing solution to the planarizing pad, the planarizing solution and planarizing pad comprising a planarizing medium, wherein the planarizing solution comprises a fluid component having a pH of about 8-11.5 and one of the planarizing solution and the planarizing pad includes a solid component comprising abrasive particles;
• and
• removing material of the outer layer from the workpiece by rubbing the outer layer against the planarizing medium with a controlled force, wherein the abrasive particles, the controlled force, and a polishing linear velocity are selected to remove the material of the outer layer without substantial agglomeration of silver on a polished surface of the outer layer.