# US 6,882,102 B2 · Light emitting device and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 6,882,102 B2 - Document ID: US6882102B2 - Status: Granted - Kind: B2 - Application number: 09/793,897 - Filed: 2001-02-28 - Published: 2001-08-30 - Granted: 2005-04-19 - Earliest claimed: 2000-02-29 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Shunpei Yamazaki - Web page: https://patentgrep.com/patent/US6882102B2 ## CPC - H10K 50/813: characterised by their shape - H10K 50/828: Transparent cathodes, e.g. comprising thin metal layers - H10K 59/805: {Electrodes} - H10K 59/12: Active-matrix OLED [AMOLED] displays - H10K 2102/3026: {Top emission} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A light emitting device having superior responsibility is provided. A pixel electrode (anode) connected to a drain wiring of an current control TFT has a slit. The slit becomes a path for light emitted from an EL layer, and emitted light can be extracted using a light shielding metallic film as the pixel electrode. A material having a low resistance can thus be used as the pixel electrode, and therefore a light emitting device having superior responsibility can be obtained. ## Claims ### Claim 1 A semiconductor device comprising: a substrate having an insulating surface; a semiconductor film over said substrate; a gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween; an interlayer insulating film having a leveled upper surface formed over said semiconductor film and said gate electrode, said interlayer insulating film having at least one contact hole; a conductive layer formed over the interlayer insulating film having the leveled upper surface wherein said conductive layer is connected to said semiconductor film through said contact hole; a pixel electrode formed over the interlayer insulating film having the leveled upper surface wherein the pixel electrode is contacted to the conductive layer; a light emitting material formed over said pixel electrode, and a second electrode formed over the light emitting material wherein the light emitting material is interposed between the pixel electrode and the second electrode, wherein the pixel electrode has a plurality of slits where light is passed, and wherein said plurality of slits are located over the leveled upper surface of the interlayer insulating film. ### Claim 2 (depends on 1) A light emitting device according to claim 1, wherein the light emitting material is an EL material. ### Claim 3 (depends on 1) A light emitting device according to claim 1, wherein the conductive layer comprises a three layer structure of titanium, aluminum, and titanium. ### Claim 4 (depends on 1) A light emitting device according to claim 1, wherein the pixel electrode is made of a metallic film or a semiconductor film. ### Claim 5 (depends on 1) A light emitting device according to claim 1, wherein the pixel electrode comprises a material selected from the group consisting of platinum, chromium, tungsten and nickel. ### Claim 6 (depends on 1) A light emitting device according to claim 1, wherein the second electrode comprises material selected from the group consisting of lithium, magnesium, cesium, calcium, potassium, barium, sodium and beryllium. ### Claim 7 A method of manufacturing a light emitting device comprising: forming at least one thin film transistor on an insulating body; forming an insulating film having a leveled upper surface over the thin film transistor; forming a pixel electrode having a plurality of slits where light is passed over the insulating film having the leveled upper surface and electrically connected to the thin film transistor; forming a light emitting material over the pixel electrode; and forming a second electrode over the light emitting material wherein the light emitting material is interposed between the pixel electrode and the second electrode, wherein said plurality of slits are located over the leveled upper surface of the interlayer insulating film. ### Claim 8 A method of manufacturing a light emitting device comprising: forming a thin film transistor on an insulating body; forming an insulating film having a leveled upper surface over the thin film transistor; forming a pixel electrode over the insulating film having the leveled upper surface and electrically connected to the thin film transistor; forming a light emitting material over the pixel electrode; and forming a second electrode over the light emitting material wherein the light emitting material is interposed between the pixel electrode and the second electrode, wherein a portion of the second electrode and the pixel electrode have a plurality of slits and said portion of the second electrode overlapping with the pixel electrode, and wherein said plurality of slits of the portion of the second electrode and the pixel electrode are located over the leveled upper surface of the interlayer insulating film. ### Claim 9 A light emitting device comprising: at least one thin film transistor; an insulating film having a leveled upper surface formed over the thin film transistor, said insulating film having at least one contact hole; a conductive layer formed over the insulating film having the leveled upper surface wherein said conductive layer is connected to said thin film transistor through said contact hole; a pixel electrode formed over the insulating film having the leveled upper surface wherein the pixel electrode is contacted to the conductive layer; a light emitting material formed over the pixel electrode; and a second electrode formed over the light emitting material wherein said light emitting material is interposed between said pixel electrode and said second electrode, wherein the pixel electrode has a plurality of slits where light is passed, and wherein said plurality of slits are located over the leveled upper surface of the interlayer insulating film. ### Claim 10 (depends on 9) A light emitting device according to claim 9, wherein the pixel electrode is made of a metallic film or a semiconductor film. ### Claim 11 (depends on 9) A light emitting device according to claim 9, wherein the pixel electrode comprises a material selected from the group consisting of platinum, chromium, tungsten and nickel. ### Claim 12 (depends on 9) A light emitting device according to claim 9, wherein the second electrode comprises material selected from the group consisting of lithium, magnesium, cesium, calcium, potassium, barium, sodium and beryllium. ### Claim 13 (depends on 9) A light emitting device according to claim 9, wherein the light emitting material is an EL material. ### Claim 14 (depends on 9) A light emitting device according to claim 9, wherein the conductive layer comprises a three layer structure of titanium, aluminum, and titanium. ### Claim 15 A light emitting device comprising: at least one thin film transistor; an insulating film having a leveled upper surface formed over the thin film transistor, said insulating film having at least one contact hole; a conductive layer formed over the insulating film having the leveled upper surface wherein said conductive layer is connected to said thin film transistor through said contact hole; a pixel electrode formed over the insulating film having the leveled upper surface wherein the pixel electrode is contacted to the conductive layer; a light emitting material formed over the pixel electrode; and a second electrode formed over the light emitting material wherein said light emitting material is interposed between said pixel electrode and said second electrode, wherein a portion of the second electrode overlaps with the pixel electrode and the portion of the second electrode and the pixel electrode have a plurality of slits, and wherein said plurality of slits of the portion of the second electrode and the pixel electrode are located over the leveled upper surface of the interlayer insulating film. ### Claim 16 (depends on 15) A light emitting device according to claim 15, wherein the pixel electrode is made of a metallic film or a semiconductor film. ### Claim 17 (depends on 15) A light emitting device according to claim 15, wherein the pixel electrode comprises a material selected from the group consisting of platinum, chromium, tungsten and nickel. ### Claim 18 (depends on 15) A light emitting device according to claim 15, wherein the second electrode comprises material selected from the group consisting of lithium, magnesium, cesium, calcium, potassium, barium, sodium and beryllium. ### Claim 19 (depends on 15) A light emitting device according to claim 15, wherein the light emitting material is an EL material. ### Claim 20 (depends on 15) A light emitting device according to claim 15, wherein the conductive layer comprises a three layer structure of titanium, aluminum, and titanium. ### Claim 21 A light emitting device comprising: at least one thin film transistor; an insulating film having a leveled upper surface formed over the thin film transistor; a pixel electrode formed over the insulating film having the leveled upper surface wherein the pixel electrode is electrically connected to the thin film transistor; a light emitting material formed over the pixel electrode; and a second electrode formed over the light emitting material wherein said light emitting material is interposed between said pixel electrode and said second electrode, wherein the pixel electrode has a plurality of slits where a light is passed, and wherein said plurality of slits are located over the leveled upper surface of the interlayer insulating film. ### Claim 22 (depends on 21) A light emitting device according to claim 21, wherein the pixel electrode is made of a metallic film or a semiconductor film. ### Claim 23 (depends on 21) A light emitting device according to claim 21, wherein the pixel electrode comprises a material selected from the group consisting of platinum, chromium, tungsten and nickel. ### Claim 24 (depends on 21) A light emitting device according to claim 21, wherein the second electrode comprises material selected from the group consisting of lithium, magnesium, cesium, calcium, potassium, barium, sodium and beryllium. ### Claim 25 (depends on 21) A light emitting device according to claim 21, wherein the light emitting material is an EL material. ### Claim 26 A light emitting device comprising: at least one thin film transistor; an insulating film having a leveled upper surface formed over the thin film transistor; a pixel electrode formed over the insulating film having the leveled upper surface wherein the pixel electrode is electrically connected to the thin film transistor; a light emitting material formed over the pixel electrode; and a second electrode formed over the light emitting material wherein said light emitting material is interposed between said pixel electrode and said second electrode, wherein a portion of the second electrode overlaps with the pixel electrode and the portion of the second electrode and the pixel electrode have a plurality of slits, and wherein said plurality of slits of the portion of the second electrode and the pixel electrode are located over the leveled upper surface of the interlayer insulating film. ### Claim 27 (depends on 26) A light emitting device according to claim 26, wherein the pixel electrode is made of a metallic film or a semiconductor film. ### Claim 28 (depends on 26) A light emitting device according to claim 26, wherein the pixel electrode comprises a material selected from the group consisting of platinum, chromium, tungsten and nickel. ### Claim 29 (depends on 26) A light emitting device according to claim 26, wherein the second electrode comprises material selected from the group consisting of lithium, magnesium, cesium, calcium, potassium, barium, sodium and beryllium. ### Claim 30 (depends on 26) A light emitting device according to claim 26, wherein the light emitting material is an EL material. ### Claim 31 A semiconductor device comprising: a substrate having an insulating surface; a semiconductor film over said substrate; a gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween; an interlayer insulating film having a leveled upper surface over said semiconductor film and said gate electrode, said interlayer insulating film having at least one contact hole; a conductive layer formed over the interlayer insulating film having the leveled upper surface wherein said conductive layer is connected to said semiconductor film through said contact hole; a pixel electrode formed over the interlayer insulating film having the leveled upper surface wherein the pixel electrode is contacted to the conductive layer; a light emitting material formed over said pixel electrode, and a second electrode formed over the light emitting material wherein the light emitting material is interposed between the pixel electrode and the second electrode, wherein a portion of the second electrode overlaps with the pixel electrode and the portion of the second electrode and the pixel electrode have a plurality of slits, and wherein said plurality of slits of the portion of the second electrode and the pixel electrode are located over the leveled upper surface of the interlayer insulating film. ### Claim 32 (depends on 31) A light emitting device according to claim 31, wherein the pixel electrode is made of a metallic film or a semiconductor film. ### Claim 33 (depends on 31) A light emitting device according to claim 31, wherein the pixel electrode comprises a material selected from the group consisting of platinum, chromium, tungsten and nickel. ### Claim 34 (depends on 31) A light emitting device according to claim 31, wherein the second electrode comprises material selected from the group consisting of lithium, magnesium, cesium, calcium, potassium, barium, sodium and beryllium. ### Claim 35 (depends on 31) A light emitting device according to claim 31, wherein the light emitting material is an EL material. ### Claim 36 (depends on 31) A light emitting device according to claim 31, wherein the conductive layer comprises a three layer structure of titanium, aluminum, and titanium. ### Claim 37 A light emitting device comprising: at least one thin film transistor formed over the substrate; an interlayer insulating film formed over the thin film transistor, said insulating film having at least one contact hole; a conductive layer formed over the interlayer insulating film wherein said conductive layer is connected to said thin film transistor through said contact hole; a first electrode formed over the insulating film wherein the pixel electrode is contacted to the conductive layer; a light emitting material formed over the pixel electrode; a second electrode formed over the light emitting material wherein said light emitting material is interposed between said first electrode and said second electrode; and an opposite substrate, wherein light emitted by said light emitting material passes through the first electrode and the second electrode, the substrate and the opposite substrate to an outside of the light emitting device. ### Claim 38 (depends on 37) A light emitting device according to claim 37, wherein the light emitting material is an EL material. ### Claim 39 A light emitting device comprising: at least one thin film transistor formed over the substrate; an interlayer insulating film formed over the thin film transistor, said insulating film having at least one contact hole; a conductive layer formed over the interlayer insulating film wherein said conductive layer is connected to said thin film transistor through said contact hole; a pixel electrode formed over the insulating film wherein the pixel electrode is contacted to the conductive layer; a light emitting material formed over the pixel electrode; and a second electrode formed over the light emitting material wherein said light emitting material is interposed between said pixel electrode and said second electrode, wherein the pixel electrode has a plurality of slits, and wherein light emitted by said light emitting material passes through the plurality of slits of the pixel electrode and the substrate to an outside of the light emitting device. ### Claim 40 (depends on 39) A light emitting device according to claim 39 wherein the pixel electrode comprises a material selected from the group consisting of platinum, chromium, tungsten and nickel. ### Claim 41 (depends on 39) A light emitting device according to claim 39 wherein the light emitting material is an EL material. ### Claim 42 (depends on 39) A light emitting device according to claim 39 wherein the conductive layer comprises a three layer structure of titanium, aluminum, and titanium. ### Claim 43 A light emitting device comprising: at least one thin film transistor; a first interlayer insulating film formed over the thin film transistor, said insulating film having at least one contact hole; a conductive layer formed over the first interlayer insulating film wherein said conductive layer is connected to said thin film transistor through said contact hole; a pixel electrode formed over the interlayer insulating film wherein the pixel electrode is contacted to the conductive layer; an second interlayer insulating film formed over the pixel electrode, the interlayer insulating film having an opening portion; a light emitting material formed over the pixel electrode through the opening portion; and a second electrode formed over the light emitting material wherein said light emitting material is interposed between said pixel electrode and said second electrode, wherein the pixel electrode has a plurality of slits, and wherein the plurality of slits of the pixel electrode are formed at least opening portion. ### Claim 44 (depends on 43) A light emitting device according to claim 43 wherein the pixel electrode comprises a material selected from the group consisting of platinum, chromium, tungsten and nickel. ### Claim 45 (depends on 43) A light emitting device according to claim 43 wherein the light emitting material is an EL material. ### Claim 46 (depends on 43) A light emitting device according to claim 43 wherein the conductive layer comprises a three layer structure of titanium, aluminum, and titanium.