Semiconductor light emitting device
AssigneeSony Corporation
InventorsHiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata
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Abstract
Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.
Claims8
A semiconductor light emitting device comprising:
- a base body;
- a selection mask formed on the base body, the selection mask defining a stripe-shaped opening having long-sides;
- a wurtzite type compound semiconductor layer formed by selective growth from the opening such as to have a ridge line substantially parallel to the long-sides of the opening formed at the intersection of two crystal planes comprising one of a (1-101) plane and a (11-22) plane;
- and
- a first conductive type cladding layer, an active layer, and a second conductive type cladding layer formed on the semiconductor layer
- wherein the second conductive type cladding layer is formed said planes located on each side of the ridge line, wherein an electrode is formed in a region of the second conductive type cladding layer excluding a portion near the ridge line.
A semiconductor light emitting device comprising:
- a base body;
- a selection mask formed on the base body, the selection mask defining a stripe-shaped opening having long-sides;
- a wurtzite type compound semiconductor layer formed by selective growth from the opening such as to have a ridge line substantially parallel to the long-sides of the opening formed at the intersection of two crystal planes comprising one of a (1-101) plane and a (11-22) plane;
- and
- a first conductive type cladding layer, an active layer, and a second conductive type cladding layer formed on the semiconductor layer wherein the second conductive type cladding layer is formed said planes located on each side of the ridge line, and
- wherein an electrode is formed in a region of the second conductive type cladding layer that is located on the pair of crystal planes and which has regular crystal steps.
A semiconductor light emitting device, comprising:
- a base body;
- a selection mask formed on the base body, the selection mask defining a stripe-shaped opening extending with a longitudinal direction taken as one of a (1-100) direction and a (11-20) direction;
- a semiconductor layer formed by selective growth from the opening such as to have a ridge line substantially parallel to the longitudinal direction of the opening;
- and
- a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer on a pair of crystal planes comprising one of a (1-101) and a (11-22) plane intersecting at said ridge line,
- wherein an electrode is formed in a region of the second conductive type cladding layer excluding a portion near the ridge line.
A semiconductor light emitting device comprising:
- a base body;
- a selection mask formed on the base body the selection mask defining a stripe-shaped opening extending with a longitudinal direction taken as a direction tilted from one of a (1-100) direction and a (11-20) direction by an angle ranging from about 0.2° to about 20°;
- a semiconductor layer formed by selective growth from the opening such as to have a ridge line substantially parallel to the longitudinal direction of the opening;
- and
- a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer on a pair of crystal planes comprising one of a (1-101) and a (11-22) plane intersecting at said ridge line,
- wherein an electrode is formed in a region of the second conductive type cladding layer excluding a portion near the ridge line.
A display unit including an array of a plurality of semiconductor light emitting devices, each device comprising:
- a base body;
- a selection mask formed in the base body the selection mask defining a stripe-shaped opening having long-sides;
- a semiconductor layer farmed by selective growth from the opening such as to have a ridge line substantially parallel to the long-sides of the opening;
- and
- a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer on a pair of crystal planes comprising one of a (1-101) and a (11-22) plane intersecting at said ridge line,
- wherein an electrode is formed in a region of the second conductive type cladding layer excluding a portion near the ridge line.
Dependencies are inferred from the claim text.