Throughput analysis system and method
AssigneeMacronix International Co., Ltd.
InventorsKuei-Yi Liu, Kuo-Hua Chen, De-Cheng Weng, Long-Fan Lin, Chiung-Fang Hsieh
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Abstract
The present invention provides a throughput monitoring and analysis system and method, comprising: a factor-fetching means and a terminal means. Wherein the factor-fetching means fetches a plurality of raw time data of the production factors corresponding to selected operation events during execution of operation events of the complex machine. The terminal means stores the time data and related information of the production factors and displaying the monitoring results according to set required condition and the data and information.
Claims16
A throughput analysis system, for monitoring at least one machine unit comprising two or more machines and a server, wherein the server is used for controlling at least one operation event of the machine unit, and wherein said operation event comprises a plurality of operation steps, the throughput analysis system comprising:
- a retrieving means, far retrieving a plurality of time data corresponding to each of said operation steps;
- a storing means, for storing the time data;
- and
- calculation means, for calculating an average throughput of the machine unit, wherein the average throughput is calculated by a following equation,
- average throughput value=actual number of wafers process (wafer out)/actual production time (hour),
- wherein actual number of wafers (wafers out)=W1+W2+ . . . +WN, where W1 represents a first wafer, W2 represent a second wafer and WN represents an Nth wafer,
- actual production time (hour)=TL1+TC1+[(Tinit1+W1*Texp1)+(Tloss2+Tinit2+W2*Texp2)+ . . . +(TlossN+TinitN+WN*TexpN)]+TDN+TUN,
- and wherein T represents time,
- TL1 represents time for loading the first wafer by a photoresist development control machine,
- TC1 represents time for forming a photoresist layer on the first wafer in the photoresist development control machine for the first wafer,
- Tinit1 represent time for preparing an exposure of an exposure control machine for the first wafer,
- Texp1 represents time for the exposure of the exposure machine for the first wafer,
- Tloss2 represents idle time of the second wafer in the exposure control machine,
- Tinit2 represent time for preparing an exposure of the exposure control machine for the second wafer,
- Texp2 represents time for the exposure of the exposure machine for the second wafer,
- TlossN represents idle time of the Nth wafer in the exposure control machine,
- TinitN represent time for preparing an exposure of the exposure control machine for the Nth wafer,
- TexpN represents time for the exposure of the exposure machine for the Nth wafer,
- TDN represents time for development of a photoresist exposure control machine of the Nth wafer, and
- TUN represents time for unloading the Nth wafer from the photoresist development control machine.
A method for analyzing throughput of a machine unit comprising two or more machines and a server, wherein the server is used for controlling at least one operation event comprising a plurality of operation steps, the method comprising:
- retrieving time data and its related information corresponding to each of said operation step;
- storing time data and its related information of said operation steps into a data server;
- calculating an average throughput of the machine unite according to the data stored in the data server in accordance with an inquiry, wherein;
- the average throughput is calculated by a following equation;
- average throughput value=actual number of wafers process (wafer out)/actual production time (hour);
- wherein actual number of wafers (wafers out)=W1+W2+ . . . +WN, where W1 represents a first wafer, W2 represent a second wafer and WN represents an Nth wafer;
- actual production time (hour)=TL1+TC1+[(Tinit1+W1*Texp1)+(Tloss2+Tinit2+W2*Texp2)+ . . . +(TlossN+TinitN+WN*TexpN)]+TDN+TUN;
- and wherein T represents time;
- TL1 represents time for loading the first wafer by a photoresist development control machine;
- TC1 represents time for forming a photoresist layer on the first wafer in the photoresist development control machine for the first wafer;
- Tinit1 represent time for preparing an exposure of an exposure control machine for the first wafer;
- Texp1 represents time for the exposure of the exposure machine for the first wafer;
- Tloss2 represents idle time of the second wafer in the exposure control machine;
- Tinit2 represent time for preparing an exposure of the exposure control machine for the second wafer;
- Texp2 represents time for the exposure of the exposure machine for the second wafer;
- TlossN represents idle time of the Nth wafer in the exposure control machine;
- TinitN represent time for preparing an exposure of the exposure control machine for the Nth wafer;
- TexpN represents time for the exposure of the exposure machine for the Nth wafer;
- TDN represents time for development of a photoresist exposure control machine of the Nth wafer;
- and
- TUN represents time for unloading the Nth wafer from the photoresist development control machine;
- and
- displaying the average throughput.
Dependencies are inferred from the claim text.