High capacity MRAM memory array architecture

A magnetic memory unit comprising:

• a plurality of magnetic tunneling junctions for storing data, each of the plurality of magnetic tunneling junctions including a first ferromagnetic layer, a second ferromagnetic layer and a first insulating layer between the first ferromagnetic layer and the second ferromagnetic layer;
• a reference magnetic tunneling junction including a third ferromagnetic layer, a fourth ferromagnetic layer and a second insulating layer between the third ferromagnetic layer and the fourth ferromagnetic layer;
• and
• means, coupled with the plurality of magnetic tunneling junctions and the reference magnetic tunneling junction, for comparing a plurality of outputs of the plurality of magnetic tunneling functions with a reference output of the reference magnetic tunneling junction;
• wherein the plurality of magnetic tunneling junctions includes eleven magnetic tunneling junctions and wherein the magnetic memory unit is capable of storing sixteen bits.

A method for using a magnetic memory cell comprising the steps of:

• (a) programming a first magnetic tunneling junction, the first magnetic tunneling junction including a first ferromagnetic layer, a second ferromagnetic layer and a first insulating layer between the first ferromagnetic layer and the second ferromagnetic layer;
• (b) programming a reference magnetic tunneling junction including a third, ferromagnetic layer, a fourth ferromagnetic layer and a second insulating layer between the third ferromagnetic layer and the fourth ferromagnetic layer;
• and
• (c) comparing a first output of the first magnetic tunneling junctions with a reference output of the reference magnetic tunneling junction.

A method for using a magnetic memory cell comprising the steps of:

• (a) programming a plurality of magnetic tunneling junctions, the plurality of magnetic tunneling junctions further including a first number of magnetic tunneling junctions;
• (b) programming a reference magnetic tunneling junction including a third ferromagnetic layer, a fourth ferromagnetic layer and a second insulating layer between the third ferromagnetic layer and the fourth ferromagnetic layer;
• and
• (c) comparing a first output of each of the plurality of magnetic tunneling junctions with a reference output of the reference magnetic tunneling junction such that the plurality of magnetic tunneling junctions are capable of storing a number of bits greater than the first number plus one.

A magnetic memory unit comprising:

• a plurality of magnetic tunneling junctions for storing data, the plurality of magnetic tunneling junctions having a first number of magnetic tunneling junctions;
• a reference magnetic tunneling junction;
• and
• means, coupled with the plurality of magnetic tunneling junctions and the reference magnetic tunneling junction, for comparing a plurality of output of each of the plurality of magnetic tunneling junctions with a reference output of the reference magnetic tunneling junction;
• wherein the plurality of magnetic tunneling junctions is capable of storing a number of bits, the number of bits being greater than the first number plus one.