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US 6,873,054 B2Granted
Semiconductor device and a method of manufacturing the same, a circuit board and an electronic apparatus
AssigneeSeiko Epson Corporation
InventorsIkuya Miyazawa, Tadayoshi Ikehara
Life of this patent
Estimating the term…
Abstract
A through hole tapered from an opening to the in-depth direction is formed in a semiconductor substrate provided with an integrated circuit. An insulating material is supplied to the through hole through the opening so as to form an insulating layer on the inner surface of the through hole. A conductive material is supplied through the opening to the through hole provided with the insulating layer so as to form a conductive portion inside the insulating layer.
Claims13
A semiconductor device manufacturing method comprising:
- (a) forming a through hole tapered from an opening to an in-depth direction in a semiconductor substrate provided with an integrated circuit, the through hole comprising a tapered portion and a straight portion, the straight portion defined by sidewalls that are generally perpendicular to a surface of the semiconductor substrate;
- (b) forming an insulating layer on an inner surface of the through hole by supplying an insulating material to the through hole through the opening;
- and
- (c) forming a conductive portion inside the insulating layer by supplying a conductive material through the opening to the through hole provided with the insulating layer.
1 more element
A semiconductor device manufacturing method comprising:
- (a) forming a through hole tapered from an opening to an in-depth direction in a semiconductor substrate provided with an integrated circuit, wherein the through hole is formed by a method including a sandblast process;
- (b) forming an insulating layer on an inner surface of the through hole by supplying an insulating material to the through hole through the opening;
- and
- (c) forming a conductive portion inside the insulating layer by supplying a conductive material through the opening to the through hole provided with the insulating layer.
1 more element
A semiconductor device comprising:
- a semiconductor substrate provided with an integrated circuit and a through hole tapered from an opening to an in-depth direction, the through hole comprising a tapered portion and a straight portion, the straight portion defined by sidewalls that are generally perpendicular to a surface of the semiconductor substrate;
- an insulating layer provided on an inner surface of the through hole;
- and
- a conductive portion provided on an inner surface of the insulating layer.
1 more element
Dependencies are inferred from the claim text.